P7NB60 Datasheet PDF – N-ch, 600V, 7.2A, Power MOSFET

Part Number: STP7NB60, Marking : P7NB60

Function: N-Channel 600V, PowerMESH MOSFET

Package :  TO-220 Pin type

Manufacturer: STMicroelectronics ( http://www.st.com )

Image

p7nb60-600v-mosfet

 

Description

This is 600V, 7.2A, N-channel Power MOSFET.

Using the latest high voltage MESH OVERLAY process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.

 

Pinout

p7nb60-datasheet-pinout

 

Features

1. TYPICALRDS(on) = 1.0 W
2. EXTREMELY HIGH dv/dt CAPABILITY
3. 100% AVALANCHE TESTED
4. VERYLOW INTRINSIC CAPACITANCES
5. GATECHARGE MINIMIZED

Applications

1. HIGH CURRENT, HIGH SPEED SWITCHING
2. SWITCH MODE POWER SUPPLIES (SMPS)
3. DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE

 

P7NB60 Datasheet

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2N7002T Datasheet PDF – 60V, 300mA, N-channel MOSFET

Part Number: 2N7002T

Function: 60V, 300mA, N-channel MOSFET

Package: SOT-23, TO-236AB Type

Manufacturer: Philips Semiconductor, NXP

Image and Pinouts:

2N7002T datasheet

 

General description :

This is 60V, 300mA, N-channel Trench MOSFET.

N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.

Features

1. Logic level threshold compatible
2. Surface-mounted package
3. Very fast switching
4. TrenchMOS technology

Applications

1. Logic level translator
2. High-speed line driver

Quick reference data

1. VDS≤60 V
2. RDSon≤5Ω
3. ID≤300 mA
4. Ptot ≤0.83 W

Limiting values

1. Drain-source voltage : Vds = 60 V
2. Drain current : Id = 300 mA
3. Total power dissipation : Ptot = 0.83 W

2N7002T Datasheet PDF

2N7002T pdf


 

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