MOSFET

5N3011 Datasheet PDF – 300V, 88A, N-Channel MOSFET

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Part Number: 5N3011

Function: 300V, 88A, N-Channel MOSFET

Package: TO-3P Type

Manufacturer: Renesas Electronics

Image :
5N3011

Description

This is a 300V, 88A, Silicon N Channel MOSFET.

Features

1. Low on-resistance

2. Low leakage current

3. High speed switching

 

Pinouts:

5N3011 Datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 300 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 88 A

4. Channel dissipation: Pch =150 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High Speed Power Switching

5N3011 Datasheet PDF

5N3011 pdf


Other data sheets are available within the file: H5N3011P, H5N3011P-E

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K80E08K3 Datasheet PDF – N-Ch, 75V, 80A, MOSFET

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Part Number: K80E08K3

Function: 75V, 80A, N-Channel MOSFET

Package : TO-220 Type

Manufacturer: Toshiba

Image and Pinouts:
K80E08K3 datasheet

Description

This is 75V, 80A, Silicon N-Channel MOS Type Field Effect Transistor.

 

Features ;

1. Low drain−source ON resistance  : RDS (ON)= 7.5 mΩ(typ.)

2. High forward transfer admittance  : |Yfs| = 135 S (typ.)

3. Low leakage current  : IDSS= 10 µA (max) (VDS= 75 V)

4. Enhancement mode  : Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA)

 

Absolute Maximum Ratings

1. Drain-source voltage: VDSS = 75 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 75 V

3. Gate-source voltage: VGSS = ±20 V

4. Drain power dissipation (Tc = 25°C): PD = 200 W

5. Single pulse avalanche energy : EAS = 107 mJ

6. Avalanche current : IAR = 40 A

7. Drain current: ID = 80 A

 

Applications:

1. E-Bike / UPS / Inverter

 

K80E08K3 Datasheet PDF

K80E08K3 pdf

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