Part Number: CEP6060R

Description

60V, 60A, N-Channel FET

Package: TO-220, TO-263 Type

Manufacturer: Chino-Excel Technology

Image and Pinouts:

Description

This is 60V, 60A, N-Channel Enhancement Mode Field Effect Transistor.

Features

Features

1. 60V , 60A , RDS(ON)=25m @VGS=10V.

2. Super high dense cell design for extremely low RDS(ON).

3. High power and current handling capability.

4. Lead free product is acquired

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 50 A

4. Maximum Power Dissipation: Pd = 88 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

CEP6060R Datasheet PDF

 

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Part Number: IRF530N

Function: 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET

Package: TO-220AB Type

Manufacturer: Fairchild Semiconductor

Image and pinout

Description

The IRF530N is 22A, 100V, 0.064 Ohm, N-Channel, Power MOSFET.

Features

1. Ultra Low On-Resistance : -rDS(ON)= 0.064Ω, VGS = 10V

2. Simulation Models
(1) Temperature Compensated PSPICE and SABER Electrical Models
(2) Spice and SABER Thermal Impedance Models

3. Peak Current vs Pulse Width Curve

4. UIS Rating Curve

 

Absolute Maximum Ratings

1. Drain to Source Voltage : VDSS = 100 V

2. Drain to Gate Voltage (RGS = 20kΩ): VDGR = 100 V

3. Gate to Source Voltage : VGS = ±20 V

4. Drain Current : ID = 22A

5. Power Dissipation: Pd = 85 W

 

IRF530N Datasheet PDF Download

Other data sheets are available within the file: IRF530

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