This post explains for the MOSFET.

The Part Number is IRFP460.

The function of this semiconductor is Power MOSFET.

The package is TO-3P.

Manufacturer: Fairchild Semiconductor

Preview images :

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Description

IRFP460 is 500V, 22A, Power MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Avalanche Rugged Technology

2. Rugged Gate Oxide Technology

3. Lower Input Capacitance

4. Improved Gate Charge

5. Extended Safe Operating Area

6. Lower Leakage Current: 10µA (Max.) @ VDS = 500V

7. Lower RDS(ON): 0.197Ω (Typ.)

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 22 A (Tc = 25°C)

4. Total Power Dissipation: Pd = 278 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

IRFP460 PDF Datasheet

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Part Number: 40T03GH, AP40T03GH

Function: N-Channel MOSFET, 30V, 28A

Package: TO-252, TO-251 Type

Manufacturer: Advanced Power Electronics

Images:

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Description

40T03GH is N-Channel MOSFET, 30V, 28A, Transistor.

Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is widely preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. The through-hole version (AP40T03GJ) are available for low-profile applications.

Features

1. Simple Drive Requirement BVDSS 30V

2. Low Gate Charge RDS(ON) 25mΩ

3. Fast Switching

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Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 25 V

3. Drain current: ID = 28 A

4. Total Power Dissipation: Pd = 31.25 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

40T03GH PDF Datasheet

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