N4800LS Datasheet PDF – 30V, 8.6A, N-Channel MOSFET

Part Number: N4800LS

Function: 30V, 8.6A, N-CHANNEL MOSFET

Package: SO-8 Type

Manufacturer: Diodes Incorporated.

Image

components

Description

This is 30V, 8.6A, N-CHANNEL ENHANCEMENT MODE MOSFET.

This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features

1. Low On-Resistance

2. Low Input Capacitance

3. Fast Switching Speed

4. Low Input/Output Leakage

Pinouts:

N4800LS image

 

Mechanical Data :

1. Case : SO-8

2. Case Material : Molded Plastic, “Green” Molding Compound.

3. Moisture Sensitivity : Level 1 per J-STD-020

 

N4800LS Datasheet

Applications:

1. Backlighting

2. Power Management Functions

3. DC-DC Converters

 

Other data sheets are available within the file: DMN4800LSS, DMN4800LSS-13

N4800LS Datasheet PDF Download


N4800LS pdf

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SSP7N60B Datasheet PDF – 600V, 7A, N-channel MOSFET

Part Number: SSP7N60B

Function: 600V, 7A, N-channel MOSFET

Package: TO-220, TO-220F Type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

SSP7N60B datasheet

 

Description

This is 600V, 7A, N-channel MOSFET.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode power supplies.

Features

1. 7.0A, 600V, RDS(on) = 1.2Ω @VGS = 10 V

2. Low gate charge ( typical 38 nC)

3. Low Crss ( typical 23 pF)

4. Fast switching

5. 100% avalanche tested

6. Improved dv/dt capability

7. TO-220F package isolation = 4.0kV

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 7 A

4. Power Dissipation: Pd = 147 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file: 7N60B, SSS7N60B

SSP7N60B Datasheet PDF Download


SSP7N60B pdf