MOSFET

IRF630 Datasheet PDF – N-Ch, 200V, 9A, Power MOSFET – ST

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This is one of the types of MOSFETs and is a kind of transistor.

The IRF630 is an N-channel MOSFET with a voltage rating of 200V and a current rating of 9A.
It has a low on-resistance of 0.4 Ohm, which allows it to handle high power and reduce power loss.
The MOSFET is housed in a TO-220 package, which provides good thermal dissipation and makes it easy to mount on a heatsink.

Part Number: IRF630, IRF630FP

Function: N-CHANNEL, 200V, 0.35Ohm, 9A, MESH OVERLAY MOSFET

Package: TO-220, TO-220FP Type

Manufacturer: STMicroelectronics

Image

irf630-mosfet

Description

This is N-channel 200V, 0.35Ω, 9A, Mesh Overlay II Power MOSFET.

This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY process. This technology matches and improves the performances compared with standard parts from various sources.

The IRF630 has a low on-resistance, which means it can handle high power and reduce power loss.
Its TO-220 package provides good thermal dissipation and makes it easy to mount on a heatsink.

Pinout

irf630-datasheet-pinout

Features

1. Extremely high dv/dt capability

2. Very low intrinsic capacitances

3. Gate charge minimized

 

Applications:

1. Switching application

Maximum Ratings

irf630-maximum-ratings

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 9 A

4. Channel temperature: Tch = 150 °C

5. Storage temperature: Tstg = -65 to +150 °C

IRF630 Datasheet

IRF630 pdf


 

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BSS123 Datasheet – 100V, N-Channel MOSFET – Fairchild

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Part Number: BSS123

Function: 100V, 0.17A, N-Channel MOSFET

Package: SOT-23 type

Manufacturer: Fairchild Semiconductor

Image and Pinouts:

BSS123 datasheet

General Description

The BSS123 is N-Channel Logic Level Enhancement Mode Field Effect Transistor.

These N-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.

These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.

Features

1. 0.17 A, 100 V. Rds(on) = 6Ω @ Vgs= 10 V, Rds(on) = 10Ω @ Vgs= 4.5 V

2. High density cell design for extremely lowRDS(ON)

3. Rugged and Reliable

4. Compact industry standard SOT-23 surface mount package

 

Absolute Maximum Ratings

1. Drain-Source Voltage : VDSS = 100 V

2. Gate-Source Voltage : VGSS = ±14 V

3. Drain current: ID = 0.17 A

4. Total Power Dissipation: Pd = 0.36 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

BSS123 Datasheet PDF Download


BSS123 pdf
BSS-123 pdf

Other data sheets are available within the file: BSS-123, BSS100