Part Number: K3568, 2SK3568

Function: 500V, 12A, N-Channel MOSFET

Package: 2-10U1B type

Manufacturer: Toshiba Semiconductor

Images:

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Description

K3568 is 500V, 12A, Silicon N Channel MOS Type (π-MOSVI) FET(Metal Oxide Semiconductor Field Effect Transistor).

This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

• Low drain-source ON resistance: RDS (ON) = 0.4Ω (typ.)

• High forward transfer admittance: |Yfs| = 8.5S (typ.)

• Low leakage current: IDSS = 100 μA (VDS = 500 V)

• Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

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Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 500 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 500 V

3. Gate-source voltage: VGSS = ±30 V

 

Applications:

1. Switching Regulator

K3568 PDF Datasheet

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Part Number: K3569, 2SK3569

Function: 600V, 10A, N-Channel MOSFET, Transistor

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:

Description

K3569 is 600V, 10A, Silicon N Channel MOS Type Field Effect Transistor (Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

• Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ.)

• High forward transfer admittance: |Yfs| = 8.5 S (typ.)

• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Drain power dissipation : Pch = 45 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

 

K3569 PDF Datasheet