MOSFET

P6NK60ZFP Datasheet – N-ch, 600V, 6A, MOSFET – ST

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Part Number: P6NK60ZFP, STP6NK60ZFP

Function : N-CHANNEL MOSFET ( N-channel 600V, 1Ω, 6 A )

Package: TO-220FP Type

Manufacturer: ST Microelectronics

Image

P6NK60ZFP image

Description

This is N-channel 600V, 1Ω, 6 A, MOSFET.

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Pinout
P6NK60ZFP datasheet pinout

Features

1. Extremely high dv/dt capability
2. 100% avalanche tested
3. Gate charge minimized

Application

1. Switching applications

N-Channel Zener-Protected SuperMESH™ Power MOSFET

Marking Information

P6NK60ZFP Marking

P6NK60ZFP Datasheet


 

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K117 Datasheet PDF – N-Channel FET, Vgds = -50V – Toshiba

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Part Number: K117, 2SK117

Function:  N-Channel FET ( Vgds = -50V, IG=10mA, Pd = 300mW )

Package: TO-92 Type

Manufacturer: Toshiba

Image

K117 image

Description

The K117 is -50V, 10mA, N-Channel MOSFET.

Features

1. High |Yfs|: |Yfs| = 15 mS (typ.) (VDS= 10 V, VGS= 0)

2. High breakdown voltage: VGDS= −50 V

3. Low noise: NF = 1.0dB (typ.)  (VDS= 10 V, ID= 0.5 mA, f = 1 kHz, RG= 1 kΩ)

4. High input impedance: IGSS= −1 nA (max) (VGS= −30 V)

 

Pinout

K117 datasheet pinout

Maximum Ratings

1. Gate-drain voltage : VGDS =  −50 V

2. Gate current : IG = 10 mA

3. Drain power dissipation : PD = 300 mW

4. Junction temperature : Tj  = 125 °C

5. Storage temperature range : Tstg = −55~125 °C

Applications:

1. Low Noise Audio Amplifier

K117 Datasheet PDF


 

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