MOSFET archives - Page 541 of 1244

Features

1. For low noise, high gain controlled input stages up to 1GHz

2. Operating voltage 9 V

3. Integrated stabilized bias network

Absolute maximum ratings ( Ta=25°C )

1. Drain-source voltage : Vds = 12 V

2. Continuos drain current : Id = 25 mA

3. Total power dissipation : Ptot = 200 mW

4. Channel temperature: Tch = 150 °C

5. Storage temperature: Tstg = -55 to +150 °C

Other data sheets are available within the file: Q62702-F1613

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: IRFZ46N

Function: 55V, 53A, HEXFET Power MOSFET

Package: TO-220AB Type

Manufacturer: International Rectifier ( www.irf.com )

Image
IRFZ46N mosfet datasheet

Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Absolute Maximum Ratings at Tc = 25°C

1. Continuous Drain Current : Vgs = 53 A
2. Pulsed Drain Current : Idm = 180 W
3. Power Dissipation: Pd = 107 V
4. Gate-to-Source Voltage : Vgs = ± 20 V
5. Avalanche Current : Iar = 28 A
6. Operating Junction and Storage Temperature Range : Tj, Tstg = -55 to + 175 °C

Pinouts

IRFZ46N transistor pinout

Features

1. Advanced Process Technology
2. Ultra Low On-Resistance
3. Dynamic dv/dt Rating
4. 175°C Operating Temperature
5. Fast Switching
6. Fully Avalanche Rated

Application

Other data sheets are available within the file: IRFZ46

MOSFET

BF1009 Datasheet – 12V, 25mA, N-Ch, MOSFET, Transistor

Description

Features

BF1009 Datasheet PDF Download

IRFZ46N MOSFET – 55V, 53A, Transistor ( Datasheet PDF )

Description

IRFZ46N MOSFET Transistor Datasheet

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