MOSFET

MAX4426 Datasheet – 1.5A, MOSFET Driver

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Part Number: MAX4426

Function: Dual High-Speed, 1.5A, MOSFET Driver

Package: DIP, SO 8 Pin Type

Manufacturer: Maxim Integrated

Pinouts:

MAX4426 datasheet

 

Description

The MAX4426, MAX4427, MAX4428 are dual monolithic MOSFET drivers designed to translate TTL/CMOS inputs to high voltage/current outputs. The MAX4426 is a dual inverting power MOSFET driver. The MAX4427 is a dual noninverting power MOSFET driver, and the MAX4428 contains one inverting section and one noninverting section. Delay times are nearly independent of VDD (see Typical Operating Characteristics). High-current output drivers rapidly charge and discharge the gate capacitance of even the largest power MOSFETs to within millivolts of the supply rails. This produces the power MOSFETs’ minimum on resistance. The device’s high speed minimizes power losses in switching power supplies and DC-DC converters.

Features

1. Upgrade for TSC4426 / TSC4427 / TSC4428

2. Lower On Resistance: 4Ωvs. 7Ω

3. Shorter Delay Times: tD1- 10ns vs. 30ns tD2- 25ns vs. 50ns

4. 1.5A Peak Output Current

5. Fast Rise and Fall Times: Typically 20ns with 1000pF Load

6. Wide Operating Range: 4.5V to 18V

7. Low Power Consumption: 1.8mA with Logic 1 Input 200µA with Logic 0 Input

8. TTL/CMOS Compatible

9. Latchup Protected-Withstand > 500mA Reverse Current

10 ESD Protected

Other data sheets are available within the file:

MAX4426CSA+, MAX4426C/D, MAX4426CPA, MAX4426CSA, MAX4426EJA

MAX4426 Datasheet PDF Download


MAX4426 pdf

K150E09NE MOSFET – 85V, 150V, TO-220AB, Transistor

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This post explains for the MOSFET.

The Part Number is TK150E09NE.

The Package is TO-220AB Type

The function of this transistor is Silicon N Channel MOSFET.

Manufacturer: Toshiba

Image

K150E09NE mosfet datasheet

Description

This is 85V, 150V, Silicon N Channel MOS Type Field Effect Transistor

 

Features

1. Low drain−source ON resistance : RDS (ON) = 3.6 mΩ (typ.) (VGS = 10 V)

2. Low leakage current : IDSS = 10 μA (max) (VDS = 85 V)

3. Enhancement mode : Vth = 2.5~4.5 V (VDS = 10 V, ID = 1.0 mA)

Pinout

K150E09NE transistor pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 85 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 150 A

4. Drain power dissipation : PD = 230 W

5. Single pulse avalanche energy : Eas = 161 mJ

6. Avalanche current : Ias = 72 A

7. Channel temperature: Tch = 175 °C

8. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: TK150E09NE

K150E09NE Datasheet PDF

K150E09NE pdf


 

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