Transistor

9014 Transistor – 45V, 0.1A, NPN, TO-92 ( Datasheet PDF )

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This post explains for the transistor 9014.

The Part Number is 9014.

The Package is TO-92 Type

The function of this transistor is Silicon NPN Transistor.

Manufacturer: Wing Shing Computer Components

Image

9014 datasheet

Description

This is Silicon NPN Transistor.

Features

1. Power dissipation, PCM : 0.4 W Tamb=25
2. Collector current, ICM : 0.1 A
3. Collector-base voltage, V(BR)CBO : 50 V

Pinout

9014 transistor pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 50 V
2. Collector to Emitter Voltage: Vceo =45 V
3. Emitter to Base Voltage: Vebo = 5 V
4. Collector Current: Ic = 100 mA
5. Total Dissipation : Pc = 450 mW
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Applications

: Pre-Amplifier, Low Level & Low Noise

9014 Transistor Datasheet

9014


 

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K150E09NE MOSFET – 85V, 150V, TO-220AB, Transistor

Posted on by pinout

This post explains for the MOSFET.

The Part Number is TK150E09NE.

The Package is TO-220AB Type

The function of this transistor is Silicon N Channel MOSFET.

Manufacturer: Toshiba

Image

K150E09NE mosfet datasheet

Description

This is 85V, 150V, Silicon N Channel MOS Type Field Effect Transistor

 

Features

1. Low drain−source ON resistance : RDS (ON) = 3.6 mΩ (typ.) (VGS = 10 V)

2. Low leakage current : IDSS = 10 μA (max) (VDS = 85 V)

3. Enhancement mode : Vth = 2.5~4.5 V (VDS = 10 V, ID = 1.0 mA)

Pinout

K150E09NE transistor pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 85 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 150 A

4. Drain power dissipation : PD = 230 W

5. Single pulse avalanche energy : Eas = 161 mJ

6. Avalanche current : Ias = 72 A

7. Channel temperature: Tch = 175 °C

8. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: TK150E09NE

K150E09NE Datasheet PDF

K150E09NE pdf


 

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