A1013 Transistor – (-)160V, PNP Transistor ( PDF Datasheet )

This post explains for the transistor.

The Part Number is 2SA1013.

The Package is TO-92 Type.

The function of this transistor is – 160 V, PNP Transistor.

Manufacturer: Unisonic Technologies ( http://www.unisonic.com.tw/ )

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A1013 transistor

Description

This is Silicon PNP Epitaxial Transistor.

The A1013 is designed for color TV class B sound output applications.

The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC’s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc

Features

1. High voltage: VCEO=160V
2. Complementary to C2383 Chip
3. High BVCEO
4. High DC current gain
5. Large continuous collector current capability

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 160 V
2. Collector to Emitter Voltage: Vceo = – 160 V
3. Emitter to Base Voltage: Vebo =  6 V
4. Collector Current: Ic = -1 A
5. Total Dissipation : Pc = 900 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

Pinout

A1013 pinout datasheet

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A1013 Transistor Datasheet

A1013 transistor pdf

IRF640N Transistor – 200V, MOSFET ( Datasheet PDF )

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: IRF640N

Function: 200V, HEXFET Power MOSFET

Package: TO-220AB, D2Pak, TO-262 Pin Type

Manufacturer: International Rectifier, Infineon

This post explains for the MOSFET IRF640N.

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IRF640N Transistor

Description

Fifth Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

IRF640N Pinout

IRF640N datasheet pinout

Features

1. Advanced Process Technology
2. Dynamic dv/dt Rating
3. 175°C Operating Temperature
4. Fast Switching
5. Fully Avalanche Rated
6. Ease of Paralleling
7. Simple Drive Requirements

Summary

1. Planar cell structure for wide SOA
2. Optimized for broadest availability from distribution partners
3. Product qualification according to JEDEC standard
4. Silicon optimized for applications switching below <100kHz
5. Industry standard through-hole power package
6. High-current carrying capability package (up to 195 A, die-size dependent)
7. Capable of being wave-soldered

Absolute Maximum Ratings ( Tc = 25°C )

1. Continuous Drain Current : Vgs = 18 V
2. Pulsed Drain Current : Imd = 72 A
3. Power Dissipation: Pd = 150 W
3. Single Pulse Avalanche Energy : Eas = 247 mJ

 

IRF640N Transistor


 

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