This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3667, 2SK3667

Function: 600V, 7.5A, N-Channel MOSFET ( Transistor )

Package: TO-220 Type

Manufacturer: Toshiba Semiconductor

Images:

Description

The K3667 is 600V, 7.5A, Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor).

This  is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Low drain-source ON resistance: RDS (ON) = 0.75Ω (typ.)

2. High forward transfer admittance: |Yfs| = 5.5S (typ.)

3. Low leakage current: IDSS = 100μA (VDS = 600 V)

4. Enhancement mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

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Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 7.5 A

4. Drain power dissipation : PD = 45 W

5. Single pulse avalanche energy : Eas = 189 mJ

6. Avalanche curren : Iar = 7.5 A

7. Repetitive avalanche energy : Ear = 4.5mJ

8. Channel temperature: Tch = 150 °C

9. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching Regulator

K3667 PDF Datasheet

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