2N449 PDF Datasheet – Transistor, NPN, 15V, -20mA, TO-39

Part Number: 2N449

Function: 15V, -20mA, NPN Transistor.

Package: 3-Pin TO-39 Type

Manufacturer: New Jersey Semiconductor

Images:

2N449 datasheet pdf

Description

The 2N449 is a low-power bipolar junction transistor rated for 15V operation and a maximum collector current of -20mA, typically used in small-signal applications. It offers modest power dissipation and is suitable for low-level amplification and switching tasks in compact electronic designs. This transistor is commonly applied in signal processing, low-current switching, and general-purpose analog circuits.

Features

  • Low power dissipation of 65mW
  • Suitable for small-signal amplification
  • Compact and efficient for low-current circuits
  • Stable operation within limited temperature range

Absolute Maximum Ratings (Tc = 25 °C)

Parameter Symbol Value Unit
Collector-Base Voltage VCBO 15 V
Emitter-Base Voltage VEBO 15 V
Collector Current IC -20 mA
Collector Power Dissipation PC 0.065 W
Junction Temperature Tj 85 °C
Storage Temperature Tstg -55 to 85 °C

Design Notes

  • Ensure collector current remains within 20mA to avoid device damage
  • Suitable for low-power circuits with minimal heat generation
  • Biasing must be carefully designed for stable small-signal amplification
  • Limited thermal range requires controlled operating environment
  • Not suitable for high-frequency or high-power applications

Typical Circuit Usage

  • Low-level signal amplification
  • Small current switching circuits
  • Sensor interface stages
  • Pre-amplifier circuits
  • Basic transistor switching applications

How to Choose This Part

  • Select for low-voltage, low-current applications
  • Ideal for compact and low-power analog designs
  • Ensure thermal limits are not exceeded in operation
  • Use where high gain or power handling is not critical
  • Consider alternatives for wider temperature or higher current needs

Applications

  • Signal processing circuits
  • Low-power electronic devices
  • Instrumentation circuits
  • Educational and prototyping designs
  • Embedded analog interfaces

Alternative / Equivalent Products

  • 2N3904 (general-purpose NPN transistor)
  • BC547 (low-noise small-signal transistor)
  • 2N2222 (higher current alternative)
  • PN2222A (plastic package variant)
  • BC548 (similar small-signal transistor)

2N449 Datasheet

2N449 pdf

30F125 Datasheet PDF – GT30F125, 330V, IGBT – Toshiba

Part Number: 30F125, GT30F125

Function: LCD Plasma common tube, 200A, 330V IGBT

Package: TO-220F Type

Manufactuerers :  Toshiba

Image

30F125

Description

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

Features

(1) IGBTs also featuring fast switching

(2) Low collector-emitter saturation voltage even in the large current area

(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications

(4) High input impedance allows voltage drives

(5) Available in a variety of packages

Product Lineup

30F125 Datasheet

Pinout

30F125 pinout

Others IGBTs

IGBT Datasheet

Applications

1. Wide range of devices and systems, including inverters

2. Switching power supplies, UPS systems

3. Electric vehicle controllers, induction heating, and more.

 

Other data sheets are available within the file: 3OF125, GT3OF125

30F125 Datasheet Download

30F125 pdf

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