C945 PDF Transistor – 50V, 100mA, 2SC945, NPN – TO 92

This is general NPN transistor.

This Transistor package is TO-92.

Part Number: C945

Function: 50V, 100mA, NPN TRANSISTOR

Manufacturer: Stanson Technology

Images:

C945 pdf

 

Features

1. Power dissipation PCM : 0.4 W (Tamb=25℃)
2. Collector current ICM : 0.15 A
3. Collector-base voltage : V (BR) CBO: 60 V
4. Operating and storage junction temperature range : TJ, Tstg = -55℃ to +150℃

C945 PDF Transistor

Description

The C945 is NPN TRANSISTOR.

1. AF OUTPUT AMPLIFIER

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS:

CONDITION Ic=1mA Ic=5uA Ie=50£g A Vcb=60V Veb=5V Ic=100mA, Ib=10mA Vce=6.0V,Ic=1.0mA Vce=6V, Ie=10mA Vcb=10V,Ie=0,f=1MHz PARAMETERS SYMBOL MIN TYP MAX UNIT Collector-Emitter Breakdown Voltage BVceo 50 V Collector-Base Breakdown Voltage BVcbo 60 V Emitter-Base Breakdown Voltage BVebo 5 V Collector-Base Leakage Icbo 0.1 uA Emitter-Base Leakage Iebo 0.1 uA Collector-Emitter Saturation Voltage Vce¡] sat¡ ^ 0.18 0.3 V DC Current Gain Hfe 90 200 600 Collector Current Ic 100 mA Current Gain Bandwidth fT 100 180 MHz Output Capacitance Cob 4.5 6.0 pF Power Dissipation Pc 0.25 W Junction Temperature Tj 125 ¢J Storage Temperature Tstg -55 125 ¢J Classification of Hfe Rank Range R 90-180 Q 135-270 P 200-400 K 300-600 STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA TEL: (650) 9389294 FAX: (650) 9389295 […]

Applications

1. AF OUTPUT AMPLIFIER.

 

C945 Datasheet


C945 pdf

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D1047 Datasheet PDF – 140V, 12A, NPN Transistor (TO-3P)

What is D1047?

This is a high power NPN bipolar junction transistor (BJT) designed for general-purpose amplifier and switching applications. It is commonly used in power amplifier circuits, audio amplifier circuits, and switching circuits due to its high voltage and current rating.

Part Number: 2SD1047

Function: 140V, 12A, NPN Transistor

Package: TO-3P Type

Manufacturer: STMicroelectronics

Image and Pinouts:

D1047 datasheet

 

Description

The D1047 is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. High power NPN epitaxial planar bipolar transistor. Advantages of the Power NPN transistor include its high power handling capability, high current gain, and low saturation voltage. It is also relatively inexpensive and widely available.

Features

1. High breakdown voltage VCEO = 140 V

2. Typical ft= 20 MHz

3. Fully characterized at 125 ºC

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 200 V

2. Collector to Emitter Voltage: Vceo = 140 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 12 A

5. Total dissipation at Tc = 25 °C : Ptot = 100 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Application

1. Power supply

Other data sheets are available within the file: 2SD1047

D1047 Datasheet PDF Download


D1047 pdf

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