K80E08K3 PDF Datasheet – 75V, N-Ch, MOSFET – TK80E08K3

This post explains for the MOSFET.

The Full Part Number is TK80E08K3.

The function of this semiconductor is 75V, 80A, Silicon N-Channel MOSFET.

The package is TO-220AB Type.

The manufacturers of this product is Toshiba.

See the preview image and the PDF file for more information.

Preview images :

1 page
K80E08K3 mosfet datasheet

Description

The K80E08K3 is 75V, 80A, Silicon N Channel MOS Type Field Effect Transistor.

Features

1. E-Bike/UPS/Inverter

2. Low drain−source ON resistance : RDS (ON) = 7.5 mΩ (typ.)

3. High forward transfer admittance : |Yfs| = 135 S (typ.)

4. Low leakage current : IDSS = 10 μA (max) (VDS = 75 V)

5. Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

2 page
K80E08K3 pdf pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 75 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 75 V

3. Gate-source voltage: VGSS = ±20 V

4. Drain current : Id = 80 A

5. Drain power dissipation (Tc = 25°C): PD = 200 W

6. Single pulse avalanche energy(Note 2) : EAS = 107 mJ

7. Avalanche current : IAR = 40 A

8. Repetitive avalanche energy (Note 3) : EAR = 20 mJ

9. Peak diode recovery dv/dt (Note 5) : dv/dt = 12 V/ns

10. Channel temperature (Note 4) : Tch = 175 °C

K80E08K3 PDF Datasheet

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FS23N15D PDF Datasheet – 150V, 23A, SMPS MOSFET – IR

This post explains for the MOSFET.

The Full Part Number is IRFS23N15D. The package is D2pak type.

The function of this semiconductor is 150V, HEXFET Power MOSFET.

The manufacturers of this product is International Rectifier.

See the preview image and the PDF file for more information.

Preview images :

1 page
FS23N15D pdf pinout

Description

FS23N15D is 150V, 23A, HEXFET Power MOSFET. HEXFET is a registered trademark for a type of power Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) developed by International Rectifier, which is now part of Infineon Technologies. HEXFET MOSFETs are known for their high-performance characteristics and are widely used in various electronic applications, particularly in power electronics and amplifiers.

Benefits :

1. Low Gate-to-Drain Charge to Reduce Switching Losses

2. Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See  App. Note AN1001)

3. Fully Characterized Avalanche Voltage  and Current

FS23N15D mosfet datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 150 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 23 A

4. Total Power Dissipation: Pd = 3.8 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Applications:

1. High frequency DC-DC converters

FS23N15D PDF Datasheet