D882 Transistor – 30V, 3A, NPN, Equivalent ( Datasheet PDF )

Part Number: D882

Function: 30V, 3A, MEDIUM POWER LOW VOLTAGE TRANSISTOR

Package: TO-126, TO-92 Type

Manufacturer: Unisonic Technologies

Image and Pinouts:

D882 datasheet

 

Description

This is 30V, 3A, NPN Silicon Transistor. D882 transistor is a type of bipolar junction transistor (BJT) made from silicon, a semiconductor material. This transistor is designed for amplifying or switching electronic signals in various electronic circuits.

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Features

1. High current output up to 3A

2. Low saturation voltage

3. Complement to 2SB772

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 40 V

2. Collector to Emitter Voltage: Vceo = 30 V

3. Emitter to Base Voltage: Vebo = 7 V

4. Collector Current: Ic = 3 A

5. Collector Dissipation : Pc = 1 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

Applications

1. Audio power amplifier

2. DC-DC convertor

3. Voltage regulator

 

D882 Datasheet PDF Download

D882 pdf


 

 

Other data sheets are available within the file: 2SD882, 2SD882G, 2SD882L

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K2698 PDF Datasheet – 500V, 15A, N-Ch, MOSFET – 2SK2698

This post explains for the MOSFET.

The Full Part Number is 2SK2698, K2698.

The function of this semiconductor is 500V, 15A, N-Channel MOSFET.

The package is TO-3P Type

The manufacturers of this product is Toshiba Semiconductor.

See the preview image and the PDF file for more information.

 

Preview images :

1 page
K2698 mosfet equivalent

Description

K2698 is 500V, 15A, Silicon N Channel MOS Type Field Effect Transistor(Metal-Oxide-Semiconductor Field-Effect Transistor). This is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

Features

1. Low drain-source ON resistance : RDS (ON) = 0.35 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 11 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)

4. Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

2 page
K2698 pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 500 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 500 V

3. Gate-source voltage: VGSS = ±30 V

4. Drain power dissipation (Tc = 25°C): PD = 150 W

5. Single pulse avalanche energy (Note 2) : EAS = 630 mJ

6. Avalanche current : IAR = 15 A

7. Repetitive avalanche energy (Note 3) : EAR = 15 mJ

8. Channel temperature: Tch = 150 °C

 

Applications:

1. DC-DC Converter

2. Relay Drive and Motor Drive

 

K2698 PDF Datasheet