Transistor

RJH3077 Datasheet PDF – 330V, 50A, IGBT – Renesas

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The IGBT is insulated-gate bipolar transistor.

This is one of the transistor types.

Part Number: RJH3077, RJH3077DPK

Function: High Speed Power Switching, N-Channel, 50A, 330V IGBT

Package: TO 3P Type

Manufacturer: Renesas

Image:

RJH3077

 

RJH3077 Datasheet

RJH3077 pdf

RJH3077 Datasheet

1. Vces : 330 V
2. Ic : 50 A
3. Ic(peak) : 200A

Applications:

1. Plasma Display Panel ( build in diode )

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2SK3639 Datasheet PDF – 20V, 64A, N-Ch, MOSFET – NEC

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Part Number: 2SK3639

Function: 20V, 64A, SWITCHING N-CHANNEL POWER MOSFET

Package: TO-252 Type

Manufacturer: NEC ( Renesas Technology )

Image and Pinouts:

2SK3639 datasheet

 

Description

The 2SK3639 is N-channel MOSFET device that features a low on-state resistance and excellent switching characteristics, and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Features

1. Low on-state resistance :
(1) RDS(on)1 = 5.5 mΩ MAX. (VGS = 10 V, ID = 32 A)
(2) RDS(on)2 = 8.5 mΩ MAX. (VGS = 4.5 V, ID = 32 A)

2. Low Ciss: Ciss = 2400 pF TYP.

Absolute Maximum Ratings ( Ta = 25°C )

1. Drain to Source Voltage (VGS = 0 V) : VDSS = 20 V

2. Gate to Source Voltage (VDS = 0 V) : VGSS = ±20 V

3. Drain Current (DC) (Tc = 25°C) : ID(DC) = ±64 A

4. Drain Current (pulse) Note : ID(pulse) = ±256 A

5. Total Power Dissipation (Tc = 25°C) : PT1 = 40 W

6. Total Power Dissipation : PT2 = 1.0 W

 

Other data sheets are available within the file: 2SK3639ZK, K3639, K3639-ZK

2SK3639 Datasheet PDF Download


2SK3639 pdf