Part Number: P0603BDG

Function: 30V, 68A, N-Channel MOSFET

Package: TO-252 Type

Manufacturer: UNIKC

Images:

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Description

The P0603BDG is N-Channel Enhancement Mode MOSFET(Metal-Oxide-Semiconductor Field-Effect Transistor).

This is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

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Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 68 A

4. Power Dissipation: Pd = 50 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

P0603BDG PDF Datasheet

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The K15A60D is one of the MOSFET types.

The Full Part Number is TK15A60D.

The function of this semiconductor is 600V, Silicon N-Channel MOSFET.

The package is TO-220 Type

The manufacturers of this product is Toshiba Semiconductor.

See the preview image and the PDF file for more information.

Preview images :

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Description

K15A60D is 600V, 15A, Silicon N-Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 8.5 S (typ.)

3. Low leakage current: IDSS = 10 μA (max) (VDS = 600 V)

4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 600 V

2. Gate-source voltage: VGSS = ±30 V

3. Drain power dissipation (Tc = 25°C): PD = 50 W

4. Single pulse avalanche energy (Note 2) : EAS = 527 mJ

5. Avalanche current : IAR = 15 A

6. Repetitive avalanche energy (Note 3) : EAR = 5.0 mJ

7. Channel temperature: Tch = 150 °C

 

Applications:

1. Switching Regulator

K15A60D PDF Datasheet