Transistor

RJP63G4 Datasheet PDF – IGBT, 630V, 40V – Renesas

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Part Number: RJP63G4, RJP63G4DPE

Function: IGBT, 630V, 40A

Package: SMD TO 263 Type

Manufacturer: Renesas, Panasonic

Image:

RJP63G4 datasheet

Description

This is 630V, 40V, Silicon N-Channel IGBT.

The IGBT is insulated-gate bipolar transistor.

 

Application Circuits :

RJP63G4 pinout

Applications:

1. High Speed Power Switching

RJP63G4 Datasheet PDF

RJP63G4 pdf

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K3868 Datasheet – 500V, 5A, N-ch, MOSFET – Toshiba

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This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K3868

Function: Silicon N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Toshiba

Image

K3868 mosfet

Description

This is 500V, 5A, Silicon N-Channel MOSFET.

Features

1. Low drain-source ON resistance: RDS (ON)= 1.3 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 3 S (typ.)

3. Low leakage current: IDSS= 100 μA (VDS= 500 V)

4. Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout

K3868 datasheet pinout

 

Absolute Maximum Ratings (Ta =25°C)

1. Drain-source voltage : VDSS = 500 V

2. Drain-gate voltage (RGS =20 kΩ): VDGR = 500 V

3. Gate-source voltage  : VGSS  = ±30 V

4. Drain current ( DC ) :  ID = 5A

5. Single pulse avalanche energy : Eas = 180 mJ

6. Avalanche current : IAR = 5 A

7. Repetitive avalanche energy  : EAR = 3.5 mJ

 

Applications:

1. Switching Regulator

Other data sheets are available within the file: 2SK3868

K3868 Datasheet