TDA8842 Datasheet PDF – DIP 56, TV Processor – Philips

Part Number: TDA8842

Function: I2C-bus controlled PAL/NTSC/SECAM TV Processor

Package: S-DIP 56 Pin

Manufacturer: Philips Semiconductors

Image

TDA8842 tv processor

Description

The various versions of the TDA8842 series are I2C-bus controlled single chip TV processors which are intended to be applied in PAL, NTSC, PAL/NTSC and multi-standard television receivers. The N2 version is pin and application compatible with the N1 version, however,a new feature has been added which makes the N2 more attractive. The IF PLL demodulator has been replaced by an alignment-free IF PLL demodulator with internal VCO (no tuned circuit required). The setting of the various frequencies (33.4, 33.9, 38, 38.9, 45,75 and 58.75 MHz) can be made via the I2C-bus.

Pinout

TDA8842 datasheet pinout

Features

1. Multi-standard vision IF circuit with an alignment-free PLL demodulator without external components

2. Alignment-free multi-standard FM sound demodulator (4.5 MHz to 6.5 MHz)

3. Audio switch

4. Flexible source selection with CVBS switch and Y(CVBS)/C input so that a comb filter can be applied

5. Integrated chrominance trap circuit

6. Integrated luminance delay line

7. Asymmetrical peaking in the luminance channel with a (defeatable) noise coring function

Other data sheets are available within the file:

TDA8840, TDA8841, TDA8843, TDA8847, TDA8840H, TDA8841H, TDA8842H

TDA8842 Datasheet PDF


 

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RJP4585 Datasheet – IGBT for Plasma LCD TV – Renesas

Part Number: RJP4585

Function: IGBT for Plasma LCD TV

Package: TO220F Type

Manufacturer: Renesas

Image:

RJP4585

Description

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

IGBTs are widely used in power electronic applications, such as motor drives, renewable energy systems, and power conversion systems, due to their high efficiency, fast switching speed, and low switching losses. They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow. When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.

The IGBT has several advantages over traditional power semiconductors, such as bipolar transistors and MOSFETs, making it a popular choice for high-power applications. These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.

 

RJP4585 Datasheet

 

Other data sheets are available within the file: RJP4585DPP

RJP4301APP Datasheet

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