K10A60D Datasheet – 600V, N-Ch MOSFET – Toshiba

This is N-Channel MOSFET. This is a kind of transistor.

Part Number: K10A60D

Function:  Silicon N Channel Power MOSFET Type

Package: TO-220SIS Type

Manufacturer: Toshiba

Image :

K10A60D image

Description

K10A60D is Silicon N Channel Power MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

1. Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)

3. Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

K10A60D Pinout

K10A60D datasheet pinout

K10A60D datasheet

Electrical Characteristics (Ta =25°C)

components

 

Applications

1. Switching Regulator

Other data sheets are available within the file: K10A60 , TK10A60D

K10A60D Datasheet PDF

K10A60D pdf


 

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C4138 PDF Datasheet – 400V, 10A, NPN Transistor – Sanken

This post explains for the NPN transistor.

The Part Number is C4138, C4138.

The function of this semiconductor is 400V, 10A, NPN Transistor.

The package is TO-3P Type

Manufacturer: Sanken electric

Preview images :

1 page
C4138 transistor pdf datasheet

Description

The C4138 is 400V, 10A, Silicon NPN Triple Diffused Planar Transistor. This is High Voltage and High Speed Switchihg Transistor.

 

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 500 V

2. Collector to Emitter Voltage: Vceo = 400 V

3. Emitter to Base Voltage: Vebo = 10 V

4. Collector Current: Ic = 10 A

5. Collector Dissipation : Pc = 80 W ( Tc=25°C )

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Application:

1. Switching Regulator and General Purpose

C4138 PDF Datasheet