K10A60D Datasheet – 600V, N-Ch MOSFET – Toshiba

This is N-Channel MOSFET. This is a kind of transistor.

Part Number: K10A60D

Function:  Silicon N Channel Power MOSFET Type

Package: TO-220SIS Type

Manufacturer: Toshiba

Image :

K10A60D image


K10A60D is Silicon N Channel Power MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.


1. Low drain-source ON-resistance: RDS (ON)= 0.58 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)

3. Low leakage current: IDSS= 10 μA(max)(VDS= 600 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

K10A60D Pinout

K10A60D datasheet pinout

K10A60D datasheet

Electrical Characteristics (Ta =25°C)




1. Switching Regulator

Other data sheets are available within the file: K10A60 , TK10A60D

K10A60D Datasheet PDF

K10A60D pdf


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