2SK3548 Datasheet – 900V, N-Channel Power MOSFET – Fuji

Part Number: 2SK3548

Function: 900V, N-Channel Enhancement  MOSFET

Package: TO-3P

Manufacturer: Fuji Electric Co.,Ltd.

Image:

2SK3548 datasheet

Description

An N-channel enhancement mode MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), 2SK3548 is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

In an N-channel enhancement mode MOSFET, the conductive channel is formed by applying a positive voltage to the gate terminal, which creates an electric field that attracts negatively charged electrons from the source region to the channel region. This increases the conductivity of the channel and allows current to flow between the source and drain terminals.

Absolute Maximum Ratings at Tc = 25°C

1. Drain-Source Voltage : Vds = 900 V, Vdsx = 900 V

2. Continuous Drain Current : Id = 10 A

3. Pulsed Drain Current : Idp = ± 40 A

4. Gate-Source Voltage : Vgs = ± 30 V

5. Maximum Power Dissipation: Pd = 180 W

Application Circuits : [ 2SK3548.pdf ]

Applications: for Switching

2SK3548 Datasheet

2SK3548 pdf

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K3683 Datasheet – 500V, MOSFET, 2SK3683 ( PDF ) – Fuji

Part Number: K368, 2SK3683

Function: N-CHANNEL SILICON POWER MOSFET

Package: TO-220F Type

Manufacturer: Fuji Electric

Image and Pinouts:
K3683 datasheet

Description

The K3683 is 500V, 19A, Power MOSFET.

An N-channel MOSFET (Metal Oxide Semiconductor Field Effect Transistor) is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

Features

1. High speed switching

2. Low on-resistance

3. No secondary breadown

4. Low driving power

5. Avalanche-proof

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 19 A

4. Max. Power Dissipation: Pd = 2.16 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching regulators

2. DC-DC converters

3. UPS (Uninterruptible Power Supply)

K3683 Datasheet PDF Download

K3683 mosfet pdf

Other data sheets are available within the file: 2SK3683, 2SK3683-01MR

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