This post explains for the MOSFET.

Metal Oxide Semiconductor Field Effect Transistor is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Part Number: IRFZ44N

Functions: HEXFET Power MOSFET ( Vdss = 55V, Rds(on) = 17.5m Ohm, Id = 49A )

Package: TO-220AB

Manufacturer: International Rectifier

Image

Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

 

IRFZ44N Pinout

 

Features

1. Advanced Process Technology

2. Ultra Low On-Resistance

3. Dynamic dv/dt Rating

4. 175°C Operating Temperature

5. Fast Switching

6. Fully Avalanche Rated

 

Electrical Characteristics

IRFZ44N Datasheet

 

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This post explains for the MOSFET.

The Part Number is IRC630. The Package is TO-220 Type

The function of this semiconductor is HEXFET Power MOSFET.

The package is TO-220 Type

Manufacturer: International Rectifier

Preview images :

Description

IRC630 is 200V, 9A, HEXFET Power MOSFET. A HEXFET Power MOSFET is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) designed for power electronics applications. HEXFET is actually a trademarked term used by the company International Rectifier (now part of Infineon Technologies) to refer to their line of power MOSFETs. The term “HEXFET” stands for “Hexagonal Structure Field-Effect Transistor.”

Third Generation HEXFETs from international Rectifier provide the desinger with the best combination of fast switching, reggedized device design, low on-resistance and cost-effeciveness. The HEXSense device provides an accurate fraction of the drain current through the additional two leads to be used of control or protection of the device.

Features:

1. Dynamic dv/dt Rating

2. Repetitive Avalanche Rated

3. Current Sense

4. Fast Switching

5. Ease of Paralleling

6. Simple Drive Requirements

[…]

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 200 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 9 A

4. Total Power Dissipation: Pd =74 W

5. Avalanche energy: Ear = 7.4 mJ

6. Channel temperature: Tch = 150 °C

7. Storage temperature: Tstg = -55 to +150 °C

IRC630 PDF Datasheet