What is K10A60D?

This post explains for the MOSFET. It is a type of power MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) that is commonly used in a range of electronic circuits, including power supplies, motor control circuits, and audio amplifiers. It is manufactured by several semiconductor companies and is widely available in the market.

The Part Number is K10A60D.

The Pacakge is TO-220 Type.

The function of this semiconductor is 600V, 10A, N-Channel MOSFET.

Manufacturer: Toshiba

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Description

The K10A60D is 600V, 10A, Silicon N Channel MOS Type Field Effect Transistor.

The MOSFET has a number of features that make it popular in electronic circuits, including its high voltage capability, low on-resistance, and fast switching speed. It also has a low gate-to-source threshold voltage, which means it can be easily controlled by low voltage signals.

It is typically used in a variety of circuits, such as in switching power supplies where it is used to control the flow of current to the load. It is also commonly used in audio amplifiers where it can deliver high output power with low distortion.

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.)

2. High forward transfer admittance: |Yfs| = 6.0 S (typ.)

3. Low leakage current: IDSS = 10 μA (VDS = 600 V)

4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

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Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Drain Power Dissipation: Pd = 45 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. Switching Regulator

 

Other data sheets are available within the file:

K10A600, TK10A60D, TK10A600

K10A60D PDF Datasheet

This post explains for the MOSFET.

The Part Number is J412, 2SJ412.

The function of this semiconductor is P-Channel MOSFET.

Manufacturer: Toshiba Semiconductor

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Description

J412 transistor is -100V, -16A, P-Channel MOSFET.

This MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a type of MOSFET that is constructed using a p-type substrate. MOSFETs are electronic devices that are widely used as switches or amplifiers in electronic circuits.

Features

1. 4-V gate drive

2. Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)

3. High forward transfer admittance: |Yfs| = 7.7 S (typ.)

4. Low leakage current: IDSS = −100 μA (max) (VDS = −100 V)

5. Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = – 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = – 16 A

4. Drain Power Dissipation: Pd = 60 W (Tc = 25°C)

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

 

Applications:

1. DC-DC Converter

2. Relay Drive and Motor Drive

J412 Datasheet

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