C5200 Transistor – 230V, NPN – Toshiba ( Datasheet PDF )

Posted on January 29, 2021May 28, 2022 by pinout

This is one of the transistor types.

Part Number: C5200, 2SC5200

Function: NPN TRIPLE DIFFUSED TYPE Transistor

Package: TO-264 Type

Manufacturer: Toshiba Semiconductor

See the preview image and the PDF file for more information.

Image

C5200 transistor

Description

NPN Transistor with a collector to emitter voltage of 230V and collector current of 30A.

Features

1. High breakdown voltage: VCEO= 230 V (min)

2. Complementary to 2SA1943

3. Suitable for use in 100-W high fidelity audio amplifier’s output stage

C5200 Pinout

Maximum Ratings (Tc = 25°C)

1. Collector-base voltage : VCBO = 230 V

2. Collector-emitter voltage : VCEO = 230 V

3. Emitter-base voltage : VEBO = 5 V

4. Collector current : IC = 15 A

5. Base current : IB = 1.5 A

6. Collector power dissipation : PC = 150 W

Applications

1. POWER AMPLIFIER

C5200 Transistor Datasheet

B1375 Datasheet – PNP Transistor, (-)60V, TO-220 type

Posted on January 12, 2021March 8, 2021 by pinout

This is one of the PNP transistor types.

Part Number: B1375

Function: Silicon PNP Triple Diffused Type Transistor

Package: TO-220 Type

Manufacturer: Toshiba

Image:

Audio Frequency Power Amplifier

• Low saturation voltage: VCE (sat)= −1.5 V (max) (IC= −2 A, IB= −0.2 A)
• High power dissipation: PC= 25 W (Tc = 25°C)
• Collector metal (fin) is covered with mold resin
• Complementary to 2SD2012

Pinouts:

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 60 V
2. Collector to Emitter Voltage: Vceo = – 60 V
3. Emitter to Base Voltage: Vebo = – 7 V
4. Collector Current: Ic = – 3 A
5. Total Dissipation : Pc = 2.0 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

B1375 Datasheet

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Toshiba