Part Number: K3878
Function: 900V, 9A, Silicon N-Channel MOSFET
Package: TO-3P type
Manufacturer: Toshiba
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Description
This is Silicon N-Channel MOS Field Effect Transistor.
Features for K3878
1. Low drain-source ON-resistance: RDS (ON)= 1.0 Ω(typ.)
2. High forward transfer admittance: ⎪Yfs⎪= 7.0 S (typ.)
3. Low leakage current: IDSS= 100 μA (max) (VDS= 720 V)
4. Enhancement model: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
1. Drain-source voltage: VDSS = 900 V
2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 900 V
3. Gate-source voltage: VGSS = ±30 V
4. Drain current DC : ID = 9, Pulse : IDP = 27 A
5. Drain power dissipation (Tc = 25°C): PD = 150 W
6. Single pulse avalanche energy : EAS = 778 mJ
7. Avalanche current : IAR = 9 A
8. Repetitive avalanche energy : EAR = 15 mJ
9. Channel temperature: Tch = 150°C
Pinouts:
Application:
1. Switching Regulator
K3878 Datasheet
Other data sheets are available within the file: 2SK3878
