SA58670A Datasheet PDF – Stereo Class-D Audio Amplifier

Part Number: SA58670A

Function: 2.1 W/channel stereo class-D audio amplifier

Package: HVQFN20 Type

Manufacturer: NXP Semiconductors.

Pinouts:

SA58670A datasheet

 

Description

The SA58670A is a stereo, filter-free class-D audio amplifier which is available in an HVQFN20 package with the exposed Die Attach Paddle (DAP). The SA58670A features independent shutdown controls for each channel. The gain may be set at 6 dB, 12 dB, 18 dB or 24 dB with gain select pins G0 and G1. Improved immunity to noise and RF rectification is increased by high PSRR and differential circuit topology. Fast start-up time and small package makes it an ideal choice for both cellular handsets and PDAs.

The SA58670A delivers 1.4 W/channel at 5.0 V and 720 mW/channel at 3.6 V into 8Ω. It delivers 2.1 W/channel at 5.0 V into 4Ω. The maximum power efficiency is excellent at 70 % to 74 % into 4Ωand 84 % to 88 % into 8Ω. The SA58670A provides thermal and short-circuit shutdown protection.

Features

1. Output power:
(1) 2.1 W/channel into 4Ω at 5.0 V
(2) 1.4 W/channel into 8Ω at 5.0 V
(3) 720 mW/channel into 8Ω at 3.6 V

2. Supply voltage: 2.5 V to 5.5 V

3. Independent shutdown control for each channel

4. Selectable gain: 6 dB, 12 dB, 18 dB and 24 dB

5. High SVRR:−77 dB at 217 Hz

6. Fast start-up time: 3.5 ms

7. Low supply current

8. shutdown current

9. Short-circuit and thermal protection

10. Space savings with 4 mm×4 mm HVQFN20 package

11. Low junction to ambient thermal resistance of 24 K/W with exposed DAP

 

Applications:

1. Portable DVD player

2. USB speaker

3. Notebook PC

 

Other data sheets are available within the file: SA58670ABS

SA58670A Datasheet PDF Download


SA58670A pdf

B1375 Datasheet – PNP Transistor, (-)60V, TO-220 type

This is one of the PNP transistor types.

Part Number: B1375

Function: Silicon PNP Triple Diffused Type Transistor

Package: TO-220 Type

Manufacturer: Toshiba

Image: B1375 image

Audio Frequency Power Amplifier

•  Low saturation voltage: VCE (sat)= −1.5 V (max)  (IC= −2 A, IB= −0.2 A)
•  High power dissipation: PC= 25 W (Tc = 25°C)
•  Collector metal (fin) is covered with mold resin
•  Complementary to 2SD2012

Pinouts:

B1375 Datasheet

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 60 V
2. Collector to Emitter Voltage: Vceo = – 60 V
3. Emitter to Base Voltage: Vebo = – 7 V
4. Collector Current: Ic = – 3 A
5. Total Dissipation : Pc = 2.0 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

 

B1375 Datasheet


 

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