MOSFET

P6NK90ZFP PDF – 900V, 5.8A, MOSFET – STP6NK90ZFP

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Part Number: P6NK90ZFP, STP6NK90ZFP

Function: N-Channel 900V, 5.8A, Power MOSFET

Package: TO-220FP Type

Manufacturer: STMicroelectronics

Images:P6NK90ZFP pinout mosfet

Features

1. TYPICAL RDS(on) = 1.75 Ω

2. EXTREMELY HIGH dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

4. GATE CHARGE MINIMIZED

5. VERY LOW INTRINSIC CAPACITANCES

6. VERY GOOD MANUFACTURING REPEATIBILITY

Description

P6NK90ZFP is 900V, 5.8A, Zener-Protected SuperMESH Power MOSFET.

SuperMESH is a term used by STMicroelectronics to describe their family of power MOSFETs. These MOSFETs are designed to have low on-resistance, making them more efficient and suitable for high-power applications.

The SuperMESH series is obtained through an extreme optimization of ST’s well established stripbased PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products.

P6NK90ZFP datasheet pdf

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source Voltage: VDSS = 900 V

2. Gate to source Voltage: VGSS = ± 30 V

3. Drain current: ID = 5.8 A

4. Drain Power Dissipation: Ptot = 30 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

P6NK90ZFP PDF Datasheet

K10A50D Transistor – 500V, 10A, TK10A50D ( MOSFET )

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Part Number: K10A50D, TK10A50D

Function: 500V, 10A, N-Channel MOSFET ( Transistor )

Package: TO-220 Type

Manufacturer: Toshiba

Images:

K10A50D transistor mosfet

 

Description

K10A50D is Silicon N Channel MOS Type Field Effect Transistor(Metal-Oxide-Semiconductor Field-Effect Transistor). This is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.62 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 5.0 S (typ.)

3. Low leakage current: IDSS = 10 μA (max) (VDS = 500 V)

4. Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

1 page
K10A50D image

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Drain Power Dissipation: Pd = 45 w

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

3 page
K10A50D pdf datasheet

Applications

1. Switching Regulator

K10A50D PDF Datasheet

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