Part Number: D9N40, AOD9N40

Function: 400V, 8A N-Channel MOSFET

Package: TO252, DPAK Type

Manufacturer: Alpha & Omega Semiconductors

Images:

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Description

The D9N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.

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Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 400 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 5 A

4. Power Dissipation: Pd = 125 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

D9N40 PDF Datasheet

 

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This post explains for the N-Channel MOSFET.

The Part Number is K13A25D, TK13A25D.

The function of this semiconductor is 250V, 13A, N-Channel MOSFET.

The package is TO-220SIS Type

Manufacturer: Toshiba Semiconductor

Preview images :

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Description

K13A25D is Silicon N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.19 Ω (typ.)

(2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V)

(3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 250 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 13 A

4. Power Dissipation: Pd = 35 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

• Switching Voltage Regulators

K13A25D PDF Datasheet

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