FS8205A Datasheet PDF – 20V, 6A, Dual N-Ch, MOSFET

This post explains for the MOSFET.

The Part Number is FS8205A.

The function of this MOSFET is Dual N-Channel MOSFET.

The package is TSSOP 8 Pin Type.

Manufacturer: Fortune Semicondcutor ( www.ic-fortune.com )

Images:

FS8205A datasheet

Description

This is 20V, 6A, Dual N-Channel Enhancement Mode Power MOSFET.

Features

1. Low On-resistacne

(1) Rds(on) = 25 mΩ MAX. (Vgs = 4.5V, Id = 4A )
(2) Rds(on) = 35 mΩ MAX. (Vgs = 2.5V, Id = 3A )

Pinout

FS8205A pinout mosfet

Absolute Maximum Ratings ( Ta=25°C )

1. Drain-Source Voltage : VDS = 20 V

2. Gate-Source Voltage : VGS= ±12 V

3. Continuous Drain Current :  ID = 6 A

4. Pulsed Drain Current : IDM = 25 A

5. Total Power Dissipation : PD = W

6. Storage Temperature Range : TSTG = -55 to 150 ℃

7. Operating Junction Temperature Range : TJ = -55 to 150 ℃

Applications:

1. Li-ion battery management appplications

 

FS8205A Datasheet

FS8205A pdf


 

Similar features and reference parts

IRF540S Datasheet PDF – 100V, 28A, N-Ch, MOSFET, Transistor

Part Number: IRF540S

Function: 100V, 28A, N-Channel MOSFET

Package: D2PAK Type

Manufacturer: Vishay Semiconductors

Image and Pinouts:

IRF540S datasheet

 

Description

The IRF540S is 100V, 28A, N-Channel Power MOSFET.

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching,ruggedized device design, low on-resistance and cost-effectiveness.

The D2PAK (TO-263) is a surface mount power package capable of accommodating die size up to HEX-4. It provides the highest power capabilityand the lowest possible on-resistance in any existing surface mount package.

The D2PAK (TO-263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

 

Features

1. Halogen-free According to IEC 61249-2-21 Definition

2. Surface Mount

3. Available in Tape and Reel

4. Dynamic dV/dt Rating

5. Repetitive Avalanche Rated

6. 175 °C Operating Temperature

7. Fast Switching

8. Ease of Paralleling

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 28 A

4. Maxumum Power Dissipation: Pd = 3.7 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Other data sheets are available within the file:

IRF540, IRF540SPBF, IRF540STRLPBF, IRF540STRRPBF, SIHF540S-E3

 

IRF540S Datasheet PDF Download

IRF540S pdf