IRFP150N Datasheet PDF – 100V, 42A, MOSFET, Transistor

Part Number: IRFP150N

Function: 100V, 42A, HEXFET Power MOSFET

Package: TO-247AC Type

Manufacturer: International Rectifier

Image and Pinouts:

IRFP150N datasheet

 

Description

The IRFP150N is HEXFET Power MOSFET. VDSS = 100V, RDS(on) = 0.036 Ohm, ID = 42A.

Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

 

Features

1. Advanced Process Technology

2. Dynamic dv/dt Rating

3. 175°C Operating Temperature

4. Fast Switching

5. Fully Avalanche Rated

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 100 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 42 A

4. Drain Power Dissipation: Pd = 160 W

5. Channel temperature: Tch = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

Other data sheets are available within the file: IRFP150, IRFP150NPBF

 

IRFP150N Datasheet PDF Download


IRFP150N pdf

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K2957 Datasheet – 30V, 50A, N-Ch, MOSFET, Transistor

Part Number: K2957

Function: 30V, 50A, N-Channel MOSFET, Transistor

Package: LDPAK Type

Manufacturer: Renesas Electronics

Image and Pinouts:

K2957 datasheet

 

Description

This is 30V, 50A, Silicon N Channel MOSFET.

In an N-channel MOSFET, the source and drain terminals are connected to an N-type semiconductor material, while the gate terminal is insulated from the channel by a thin oxide layer.

Features

1. Low on-resistance RDS(on)= 7mW typ.

2. 4V gate drive devices.

3. High speed switching

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 30 V

2. Gate to source voltage: VGSS = ± 20 V

3. Drain current: ID = 50 A

4. Channel dissipation: Pch = 75 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. High Speed Power Switching

 

K2957 Datasheet PDF Download


K2957 pdf

Other data sheets are available within the file: 2SK2957, 2SK2957L-E, 2SK2957STL-E, K2957STL-E