60R580P Datasheet – 600V, 8A, N-ch, MOSFET – Magnachip

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 60R580P, MMF60R580P

Function: 600V, 0.58 Ohm, N-channel MOSFET

Package: TO-220F Type

The manufacturers of this product is MagnaChip Semiconductor.

See the preview image and the PDF file for more information.

Image:

60R580P mosfet

Description

The 60R580P is power MOSFET using magnachip’s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as low switching loss.

60R580P Pinout

60R580P datasheet pinout

Features

1. Low Power Loss by High Speed Switching and Low On-Resistance

2. 100% Avalanche Tested

3. Green Package – Pb Free Plating, Halogen Free

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 8 A

4. Power Dissipation: Pd = 70 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. PFC Power Supply Stages

2. Switching Applications

3. Adapter

4. Motor Control

5. DC – DC Converter

 

60R580P Datasheet


 

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K2698 PDF Datasheet – 500V, 15A, N-Ch, MOSFET – 2SK2698

This post explains for the MOSFET.

The Full Part Number is 2SK2698, K2698.

The function of this semiconductor is 500V, 15A, N-Channel MOSFET.

The package is TO-3P Type

The manufacturers of this product is Toshiba Semiconductor.

See the preview image and the PDF file for more information.

 

Preview images :

1 page
K2698 mosfet equivalent

Description

K2698 is 500V, 15A, Silicon N Channel MOS Type Field Effect Transistor(Metal-Oxide-Semiconductor Field-Effect Transistor). This is a type of MOSFET that is commonly used in electronic circuits for switching and amplification. It is called an enhancement mode MOSFET because its operation is enhanced by the presence of an external voltage.

Features

1. Low drain-source ON resistance : RDS (ON) = 0.35 Ω (typ.)

2. High forward transfer admittance : |Yfs| = 11 S (typ.)

3. Low leakage current : IDSS = 100 μA (max) (VDS = 500 V)

4. Enhancement mode : Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

 

2 page
K2698 pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-source voltage: VDSS = 500 V

2. Drain-gate voltage (RGS = 20 kΩ): VDGR = 500 V

3. Gate-source voltage: VGSS = ±30 V

4. Drain power dissipation (Tc = 25°C): PD = 150 W

5. Single pulse avalanche energy (Note 2) : EAS = 630 mJ

6. Avalanche current : IAR = 15 A

7. Repetitive avalanche energy (Note 3) : EAR = 15 mJ

8. Channel temperature: Tch = 150 °C

 

Applications:

1. DC-DC Converter

2. Relay Drive and Motor Drive

 

K2698 PDF Datasheet