MOSFET

P36NE06 PDF – N-Ch, 60V, MOSFET – STP36NE06 – ST

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This is one of the semiconductor MOFET types.

This post explains for the semiconductor P36NE06.

The Full Part Number is STP36NE06. The package is TO-220 type.

The function of this semiconductor is N-CHANNEL 60V, 36A, Power MOSFET.

Manufacturer: ST Microelectronics

Preview images :P36NE06 pinout datasheet

Description

This Power Mosfet is the latest development of SGS-THOMSON unique “Single Feature SizeÔ” strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. An N-channel, 60V MOSFET refers to a specific type of Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) that has an N-channel as the conducting channel and can handle a maximum voltage of 60 volts.

N-channel MOSFETs are commonly used in electronic circuits for various applications, such as power supplies, motor control, lighting control, and audio amplification. They offer advantages like fast switching speeds, low on-resistance (RDS(on)), and low gate drive requirements.

Applications:

1. HIGH CURRENT, HIGH SPEED SWITCHING
2. SOLENOID AND RELAY DRIVERS
3. MOTOR CONTROL, AUDIO AMPLIFIERS
4. DC-DC & DC-AC CONVERTERS

Features:

1. TYPICAL RDS(on) = 0.032 W
2. EXCEPTIONAL dv/dt CAPABILITY
3. 100% AVALANCHE TESTED
4. LOW GATE CHARGE 100 oC
5. APPLICATION ORIENTED CHARACTERIZATION

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P36NE06 pdf mosfet

P36NE06 PDF Datasheet

IRFZ44N Datasheet – 55V, Power MOSFET – IR ( PDF )

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This post explains for the MOSFET.

Metal Oxide Semiconductor Field Effect Transistor is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Part Number: IRFZ44N

Functions: HEXFET Power MOSFET ( Vdss = 55V, Rds(on) = 17.5m Ohm, Id = 49A )

Package: TO-220AB

Manufacturer: International Rectifier

Image

IRFZ44N image

Description

Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

 

IRFZ44N Pinout

IRFZ44N pinout

 

Features

1. Advanced Process Technology

2. Ultra Low On-Resistance

3. Dynamic dv/dt Rating

4. 175°C Operating Temperature

5. Fast Switching

6. Fully Avalanche Rated

 

Electrical Characteristics

IRFZ44N datasheet

IRFZ44N Datasheet


 

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