B1375 Transistor – PNP Transistor ( – 60V, – 3A ), 2SB1375

Part Number: B1375, 2SB1375

Function: PNP Transistor ( – 60V, – 3A )

Pacakge : TO-220 Type

Manufacturer: Toshiba Semiconductor

B1375 pinout datasheet

Description

The B1375 is Silicon PNP Triple Diffused Type Transistor.

 

Applications:

1.Audio Frequency Power Amplifier

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = – 60 V
2. Collector to Emitter Voltage: Vceo = – 60 V
3. Emitter to Base Voltage: Vebo = – 7 V
4. Collector Current: Ic = – 3 A
5. Total Dissipation : Pc = 2.0 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -55 ~ +150°C

 

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B1375 pdf

B1375 Datasheet

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AD162 Datasheet – 32V, PNP Transistor for AF Power Stages

This post explains for the Transistor.

The Part Number is AD162.

The function of this semiconductor is PNP Transistor.

Manufacturer: Tesla Elektronicke, Telefunken

Image

AD162 datasheet pnp transistor

Description

The AD162 is Germanum PNP transistor for AF power stages, complementary to AD161.

Germanium PNP transistors were commonly used in audio frequency (AF) power stages in the early days of electronics due to their favorable characteristics for audio applications. Germanium transistors, compared to silicon transistors, have certain advantages such as lower saturation voltage and better performance at higher temperatures, which made them suitable for amplifying audio signals.

In AF power stages, Germanium PNP transistors were often employed as output transistors in audio amplifiers. They could handle higher power levels and drive speakers or other loads. These transistors were typically operated in a class AB or class B configuration, where multiple transistors would be used in a push-pull arrangement to amplify the positive and negative halves of the audio waveform.

However, it’s important to note that Germanium PNP transistors are less commonly used in modern designs compared to their silicon counterparts.

In modern audio amplifier designs, silicon-based transistors, such as NPN or PNP silicon bipolar junction transistors (BJTs), or even MOSFETs, are more commonly used due to their improved performance, reliability, and availability.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = -32 V
2. Collector to Emitter Voltage: Vceo = -20 V
3. Emitter to Base Voltage: Vebo = -10 V
4. Collector Current: Ic = -1 A
5. Total Dissipation : Ptot = 6 W
6. Junction Temperature: Tj = 90°C
7. Storage Temperature: Tsg = -55 ~ +90°C

AD162 pdf transistor

AD162 Datasheet

AD162 pdf

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