Part Number: MG800J1US51
Function: Silicon N-Channel IGBT Module
Package: Module Type
Manufacturer: Toshiba
Image and pinouts :
Description
1. 800A, 600V, IGBT
2. The electrodes are isolated from case.
3. High input impedance
4. Ehancement-Mode
Absolute maximum ratings ( Ta=25°C )
1. Collector to Emitter Voltage : Vces = 600 V
3. Gate-Emitter Voltage : Vges = ± 20 V
4. Collector Current: Ic = 800 A
5. Total Dissipation : Pc = 2800 W
6. Junction Temperature: Tj = 150°C
7. Storage Temperature: Tsg = -40 ~ +125°C
Applications
1. High Power Switching
2. Motor Control
Other data sheets are available within the file: MG800J1US51
MG800J1US51 Datasheet PDF Download
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