Transistor

2SA1668 Datasheet – PNP Transistor, Equivalent – Sanken

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This is one of the PNP transistor types.

Part Number: 2SA1668, A1668

Function : -200V, -2A, Silicon PNP Epitaxial Planar Transistor

Package: TO220-F Type

Manufacturer: Sanken

Image

2SA1668 datasheet

Description

The 2SA1668 transistor is a PNP type bipolar junction transistor (BJT) that is mainly used in audio amplifiers and low-frequency amplifier circuits.

 

Absolute maximum ratings ( Ta=25°C )

1. Complement to type 2SC4382

2. Collector to Base Voltage : VCBO = -200V

3. Collector to Emitter Voltage : VCEO = -200V

4. Emitter to Base Voltage : VEBO = -6V

5. Collector Current : IC = -2A

6. Base Current : IB = -1A

7. Total Dissipation : PC = 25W

 

Pinout

2SA1668 pinout

 

Application

1. TV Vertical Output, Audio Output Driver and General Purpose

 

2SA1668 Datasheet

A1668 pdf

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30F124 Datasheet – GT30F124, 300V, 200A, IGBT – Toshiba

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Part Number: GT30F124

Function: Discrete 300V, 200A, IGBT ( Insulated-Gate Bipolar Transistor )

Package: TO-220SIS Type

Manufacturer: Toshiba

Image:

30F124 Image

Description

IGBT 30F124 is a high voltage and high current Insulated Gate Bipolar Transistor (IGBT) used for power electronics applications. It is commonly used for motor control, AC/DC conversion, and power switching applications due to its high voltage and current rating, fast switching speed, and low losses. It has a maximum voltage rating of 300V and a maximum current rating of 200A, making it suitable for medium to high power applications. IGBTs are widely used in various applications, including power electronics, motor drives, renewable energy systems, and electric vehicle inverters.

 

Features of the Toshiba Discrete IGBT

The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used in inverter and power conversion circuits for such diverse applications as motor drivers, uninterruptible power supply (UPS) systems, IH cookers, plasma display panels (PDPs), strobe flashes and so on.

(1) IGBTs also featuring fast switching

(2) Low collector-emitter saturation voltage even in the large current area

(3) IGBTs featuring a built-in diode with optimal characteristics tailored to specific applications

(4) High input impedance allows voltage drives

(5) Available in a variety of packages

30F124 Transistor ( 300V 200A IGBT )

30F124 Toshiba

 

30F124 Datasheet

Applications

(1) Plasma display panels

Parallel MOSFETs have been used for the drive circuitry of plasma display panels (PDPs). Recently, however, IGBTs are commonly used in large current applications due to their superior current conduction capability.

IGBTs are commonly used in power conversion systems, such as inverters, where they switch high currents on and off rapidly to convert DC power to AC power or vice versa.

Pinout

igbt pinout

Other data sheets are available within the file: 3OF124, GT3OF124

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Download 30F124 Datasheet PDF


30F124 pdf

 

 

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