SVF7N65F PDF – 650V, 7A, N-Ch, MOSFET ( Transistor )

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: SVF7N65F, SVF7N65T

Function: 650V, 7A, N-CHANNEL MOSFET Transistor

Package: TO-220F, TO-220 Type

Manufacturer: Silan Microelectronics

Images:

SVF7N65F mosfet datasheet

Description

SVF7N65T / SVF7N65F is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.

N-channel enhancement mode power MOSFETs are popular in power electronics due to their low on-resistance (RDS(on)) and fast switching capabilities. These transistors are used to efficiently control and switch high currents and voltages in various applications.

SVF7N65F pdf datasheet

Features:

1. 7A, 650V, RDS(on)(typ)=1.1 Ω @VGS=10V
2. Low gate charge
3. Low Crss
4. Fast switching
5. Improved dv/dt capability

Pinout:

SVF7N65F transistor pinout

Absolute Maximum Ratings (Tc = 25°C)

1. Drain-Source Voltage : VDS = 650 V
2. Gate-Source Voltage : VGS = ±30 V
3. Drain Current : Id = 7 A
4. Power Dissipation : 46 W
5. Channel temperature: Tch = -55 to +150 °C
6. Storage temperature: Tstg = -55 to +150 °C

SVF7N65F PDF Datasheet

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2SC2316 Datasheet PDF – 80V, 6A, NPN Transistor – Sanken

Part Number: 2SC2316

Function: 80V, 6A, NPN Transistor

Package: TO-92, TO-220 Type

Manufacturer: Sanken Electric co.,ltd.

Image:

2SC2316 datasheet

 

Description

This is 80V, 6A, Silicon NPN Triple Diffused Mesa Transistor. Super Beta Transistor.

A Silicon NPN Triple Diffused Mesa Transistor refers to a specific type of bipolar junction transistor (BJT) that is constructed using silicon as the semiconductor material. This transistor structure is known as a mesa transistor, which is characterized by a mesa-shaped structure on the surface of the transistor.

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 100 V

2. Collector to Emitter Voltage: Vceo = 80 V

3. Emitter to Base Voltage: Vebo = 6 V

4. Collector Current: Ic = 6 A

5. Total Dissipation : Pc = 50 W

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

 

Applications:

1. General Purpose

Frequently used NPN transistors

Other data sheets are available within the file: 2SC2315, C2315, C2316

2SC2316 Datasheet PDF Download


2SC2316 pdf

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