50N06 Datasheet PDF – 60V, 50A, N-Ch, MOSFET (Transistor)

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: 50N06, FQP50N06

Function: 60V, N-Channel MOSFET

Package: TO-220 Type

Manufacturer: Fairchild Semiconductor

This post explains for the transistor 50N06.

Image

50N06 60V MOSFET

Description

This is 60V, 50A, N-Channel MOSFET.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to  minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/DC converters, and high efficiency switching for power management in portable and battery operated products.

50N06 Pinout

50N06 datasheet pinout

Features

1. 50A, 60V, RDS(on) = 0.022Ω @VGS = 10 V
2. Low gate charge ( typical 31 nC)
3. Low Crss ( typical 65 pF)
4. Fast switching
5. 100% avalanche tested
6. Improved dv/dt capability
7. 175°C maximum junction temperature rating

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 60 V
2. Gate to source voltage: VGSS = ± 25 V
3. Drain current: ID = 50 A
4. Power Dissipation: Pd = 120 W (Tc = 25°C)
5. Channel temperature: Tch = 175 °C
6. Storage temperature: Tstg = -55 to +175 °C

 

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50N06 Datasheet PDF Download


 

 

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K16A60W Datasheet PDF – 600V, 15.8A, N-Ch, MOSFET

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K16A60W

Function: 600V, 15.8A, N-Channel MOSFET

Package: TO-220SIS Type

Manufacturer: Toshiba Semiconductor

Images:

K16A60W transistor mosfet

Description

The K16A60W is Silicon N-Channel MOSFET, Transistor.

Features

(1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.)
by used to Super Junction Structure : DTMOS

(2) Easy to control Gate switching

(3) Enhancement mode: Vth = 2.7 to 3.7 V (VDS = 10 V, ID = 0.79 mA)

 

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 15.8 A

4. Drain power dissipation : PD =  40 W

5. Single pulse avalanche energy : Eas = 231 mJ

6. Avalanche curren : Iar = 4 A

7. Channel temperature: Tch = 150 °C

8. Storage temperature: Tstg = -55 to +150 °C

[…]

 K16A60W Pinout

K16A60W pinout datasheet

Applications:

1. Switching Voltage Regulators

 

Other data sheets are available within the file: TK16A60W

K16A60W Datasheet PDF

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