B772P – 2SB772

Part Number : B772P

Function : 2SB772

Manufactures : NEC

Images :

1 page
B772P image

2 page
pinout

Description :

DATA SHEET PNP SILICON POWER TRANSISTOR 2SB772 PNP SILICON POWER TRANSISTOR DESCRIPTION The 2SB772 is PNP silicon transistor suited for the output stage of 3 W audio amplifier, voltage regulator, DC-DC converter and relay driver. PACKAGE DRAWING (Unit: mm) 8.5 MAX. 3.2 ±0.2 3.8 ±0.2 2.8 MAX. FEATURES • Low saturation voltage VCE(sat) ≤ −0.5 V (IC = −2 A, IB = −0.2 A) • Excellent hFE linearity and high hFE hFE = 60 to 400 (VCE = −2 V, IC = −1 A) • Less cramping space required due to small and thin package and reducing the trouble for attachment to a radiator. No insulator bushing required. 12.0 MAX. 2.5 ±0.2 13.0 MIN. ABSOLUTE MAXIMUM RATINGS Maximum Temperature Storage Temperature −55 to +150°C Junction Temperature 150°C Maximum Maximum Power Dissipation 1.0 W Total Power Dissipation (TA = 25°C) 10 W Total Power Dissipation (TC = 25°C) Maximum Voltages and Currents (TA = 25°C) Collector to Base Voltage −40 V VCBO Collector to Emitter Voltage −30 V VCEO Emitter to Base Voltage −5.0 V VEBO Collector Current (DC) −3.0 A IC(DC) IC(pulse)Note Collector Current (pulse) −7.0 A Note Pulse Test PW ≤ 350 µs, Duty Cycle ≤ 2% 12 TYP. 0.55 +0.08 –0.05 0.8 +0.08 –0.05 1.2 TYP. 2.3 TYP. 2.3 TYP. 1: Emitter 2: Collector: connected to mounting plane 3: Base ELECTRICAL CHARACTERISTICS (TA = 25°C) CHARACTERISTIC DC Current Gain DC Current Gain Gain Bandwidth Product Output Capacitance Collector Cutoff Current SYMBOL hFE1 hFE2 fT Cob ICBO IEBO VCE(sat) VBE(sat) TEST CONDITIONS VCE = −2.0 V, IC = −20 mA VCE = −5.0 V, IC = −0.1 A VCB = −10 V, IE = 0, f = 1.0 MHz VCB = −30 V, IE = 0 A VEB = −3.0 V, IC = 0 A IC = −2.0 A, IB = −0.2 A IC = −2.0 A, IB = −0.2 A Note Note Note Note MIN. 30 60 TYP. 220 160 80 55 MAX. 400 UNIT VCE = −2.0 V, IC = −1.0 mA MHz pF −1.0 −1.0 ww.DataSheet4U.com Emitter Cutoff Current Collector Saturation Voltage Base Saturation Voltage µA µA V V −0.3 −1.0 −0.5 −2.0 Note Pulse Test: PW ≤ 350 µs, Duty Cycle ≤ 2% CLASSIFICATION OF hFE Rank Range R 60 to 120 Q 100 to 200 P 160 to 320 E 200 to 400 Remark Test Conditions: VCE = −2.0 V, IC = 1.0 A The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. D17118EJ2V0DS00 (2nd edition) (Previous No. TC-3569) Date Published March 2004 N CP(K) Printed in Japan The mark shows major revised points. c DataSheet 4 U .com www.DataSheet4U 4U.com 2004 2SB772 TYPICAL CHARACTERISTICS (TA = 25°C, unless otherwise noted.) VCE IC TA TC IC(pulse) IC(DC) 50% ∆Rth PT VCE hFE TC = […]

3 page
image

B772P Datasheet


This entry was posted in Uncategorized. Bookmark the permalink.