Pinout

93LC46B PDF Datasheet – 1K Microwire, Serial EEPROM

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Part Number: 93LC46B

Function: 1K Microwire Compatible Serial EEPROM

Package: SOIC 8 Pin Type

Manufacturer: Microchip Technology

Images:

93LC46B datasheet pinout

Description

The Microchip Technology Inc. 93XX46A/B/C devices are 1Kbit low-voltage serial Electrically Erasable
PROMs (EEPROM). Word-selectable devices such as the 93AA46C, 93LC46C or 93C46C are dependent
upon external logic levels driving the ORG pin to set word size. For dedicated 8-bit communication, the
93AA46A, 93LC46A or 93C46A devices are available, while the 93AA46B, 93LC46B and 93C46B devices
provide dedicated 16-bit communication.

EEPROM stands for Electrically Erasable Programmable Read-Only Memory. It is a type of non-volatile memory used in computers, microcontrollers, and other electronic devices to store data that must be retained even when the power is turned off. EEPROM is a variation of ROM (Read-Only Memory) that can be both programmed and erased electrically.

2 page
93LC46B pdf pinout

Features

• Low-Power CMOS Technology

• ORG Pin to Select Word Size for ‘46C’ Version

• 128 x 8-bit Organization ‘A’ Devices (no ORG)

• 64 x 16-bit Organization ‘B’ Devices (no ORG)

• Self-Timed Erase/Write Cycles (including Auto-Erase)

• Automatic Erase All (ERAL) Before Write All (WRAL)

• Power-On/Off Data Protection Circuitry

• Industry Standard 3-Wire Serial I/O

• Device Status Signal (Ready/Busy)

• Sequential Read Function

93LC46B PDF Datasheet

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H15R1203 PDF Datasheet – 1200V, 15A, IGBT, Transistor

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This post explains for the IGBT.

The Part Number is IHW15N120R3.

The Marking is H15R1203.

The function of this semiconductor is 1200V, 15A, IGBT.

The package is TO-247-3 type

Manufacturer: Infineon Technologies

Preview images :

H15R1203 pdf datasheet

Description

H15R1203 is 1200V, 15A, Reverse conducting IGBT with monolithic body diode.

IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

1. Powerful monolithic body diode with low forward voltage designed for soft commutation only

2. TRENCHSTOPTM technology applications offers:

(1) Very tight parameter distribution

(2) High ruggedness, temperature stable behavior

(3) Low VCEsat

(4) Easy parallel switching capability due to positive temperature coefficient in VCEsat

3. Low EMI

4. Qualified according to JESD-022 for target applications

5. Pb-free lead plating; RoHS compliant

H15R1203 igbt equivalent

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 1200 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 15 A (Tc = 100°C)

4. Collector dissipation : Ptot = 254 W (Tc = 25°C)

5. Junction temperature : Tj = 175 °C

6. Storage temperature: Tstg = -55 to +175 °C

 

Applications:

1. Inductive cooking

2. Inverterized microwave ovens

3. Resonant converters

4. Soft switching applications

H15R1203 PDF Datasheet

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