K8A50D Datasheet – 500V, N-ch, MOSFET – Toshiba

This is one of the types of MOSFETs and is a kind of transistor.

Part Number: K8A50D, K8A500, TA8A500

Function: Silicon N Channel MOS Type Field Effect Transistor

Package: TO-220 Type

Manufacturer: Toshiba

Image :

k8a50d-mosfet

 

Description

This is 500V, 8A, N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor).

Correct Part Number K8A50D, Full Part Number TA8A50D.

K8A50D MOSFET is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

When a positive voltage is applied to the gate terminal, it attracts electrons to the channel, creating an inversion layer and allowing current to flow between the source and drain terminals.

 

Features

1. Low drain-source ON-resistance: RDS (ON)= 0.7 Ω(typ.)

2. High forward transfer admittance: |Yfs| = 4.0 S (typ.)

3. Low leakage current: IDSS= 10 μA (max) (VDS= 500 V)

4. Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 mA)

 

Pinout

K8A50D datasheet pinout

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 500 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 8 A

4. Drain Power Dissipation: Pd = 40 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Electrical Characteristics

K8A50D electrical characteristics

Applications:

1. Switching Regulator

 

K8A50D Datasheet

K8A500 pdf

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