MOSFET

P10NK80ZFP Datasheet – 800V, 9A, 40W, N-ch MOSFET – ST

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Part Number: STP10NK80ZFP, Marking : P10NK80ZFP

Function : N-Channel 800V, 8A, Zener-Protected Supermesh Power MOSFET

Package: TO-220FP Type

Manufacturer: STMicroelectronics

Image

P10NK80ZFP mosfet

General Description

The SuperMESH series is obtained through an extreme optimization of ST’s well established strip based PowerMESH layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh products.

Pinout
P10NK80ZFP datasheet pinout

Applications

1.  HIGH CURRENT, HIGH SPEED SWITCHING

2.  SWITCH MODE POWER SUPPLIES

3.  DC-AC CONVERTERS FOR WELDING, UPS AND MOTOR DRIVE

 

Product Summary

1. TYPICAL RDS(on) = 0.78Ω

2.  EXTREMELY HIGH dv/dt CAPABILITY

3. 100% AVALANCHE TESTED

4. GATE CHARGE MINIMIZED

5. VERY LOW INTRINSIC CAPACITANCES

6. VERY GOOD MANUFACTURING REPEATIBILITY

P10NK80ZFP Datasheet


 

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P2904BD Datasheet PDF – 40V, 25A, N-Ch, MOSFET, NIKO

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Part Number: P2904BD

Function: 40V, 25A, N-Channel MOS Field Effect Transistor

Package: TO-252 Type

Manufacturer: NIKO Semiconductor

Image

P2904BD MOSFET

Description

This is V(br)dss = 40V, 25A, N-Channel Logic Level Enhancement MOSFET.

Pinouts:

P2904BD pinouts

Absolute maximum ratings ( Ta=25°C )

1. Drain-Source Voltage : VDS = 40 V

2. Gate-Source Voltage : VGS = ±20

3. Continuous Drain Current ( Tc=25°C ) : Id = 25 A

4. Pulsed Drain Current : Idm = 75 A

5. Avalanche Current : Ias = 27 A

6. Avalanche Energy ( L=0.1mH ) : Eas = 37 mJ

7. Power Dissipation ( Tc=25°C ) : Pd = 30 W

Features

1. NIKO-SEM, Halogen-Free & Lead-Free

P2904BD Datasheet

P2904BD Datasheet PDF Download


P2904BD pdf

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