Part Number: RJP3053DPP
Function: IGBT, 300V, 30A
Package: TO-220FN Type
Manufacturer: Renesas Technology
Images:
Description
RJP3053DPP is 300V, 30A, High-speed type IGBT.
IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).
They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.
An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.
When the gate voltage is removed, the channel is turned off, and the IGBT becomes an open switch.
These advantages include high voltage and current handling capability, fast switching speed, low switching losses, and low on-state resistance.
Block Diagram
Features
1. Low Vce (sat )
2. High-Speed Switching
Ordering Information :
RJP3063DPP 300 30 ±30 1.7 0.30 TO-220FN
RJP3054DPP 300 35 ±30 1.8 0.15 TO-220FN
RJP3064DPP 300 35 ±30 1.5 0.30 TO-220FN
RJP3055DPP 300 40 ±30 1.8 0.15 TO-220FN
RJP3065DPP 300 40 ±30 1.5 0.3 TO-220FN
RJP4065DPP 400 40 ±30 1.6 0.3 TO-220FN
RJP2557DPK 270 50 ±30 1.6 0.15 TO-3P
RJP3056DPK 300 45 ±30 1.6 0.15 TO-3P
RJP3057DPK 300 50 ±30 1.6 0.15 TO-3P
RJP3066DPK 300 45 ±30 1.4 0.3 TO-3P
RJP3067DPK 300 50 ±30 1.4 0.3 TO-3P
RJP4067DPK 400 50 ±30 1.7 0.35 TO-3P
RJP3053DPP PDF Datasheet
