P75N02LDG PDF – N-Ch, 25V, 75A, MOSFET (Transistor)

This post explains for the MOSFET.

The Part Number is P75N02LDG.

The Package is TO-252 Type.

The function of this transistor is N-Channel MOSFET (25V, 75A).

Manufacturer: UNIKC Semiconductor

Images:

P75N02LDG transistor mosfet

Description

The P75N02LDG is N-Channel Enhancement Mode MOSFET.

P75N02LDG pinout datasheet

 

PRODUCT SUMMARY

1. V(BR)DSS RDS(ON) 25V 5mΩ @VGS = 10V ID 75A TO-252

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 75 50 170 Avalanche Current IAS 45 Avalanche Energy L = 0.1mH EAS 100 Power Dissipation TC = 25 °C TC = 100 °C PD 54 32.75 Operating Junction & Storage Temperature Range Lead Temperature (1/16″ from case for 10 sec.) TJ, TSTG TL -55 to 150 275 UNITS V A mJ W °C THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Case Junction-to-Ambient Case-to-Heatsink 1Pulse width limited by maximum junction temperature. SYMBOL RqJC RqJA RqCS TYPICAL 0.6 MAXIMUM 2.3 62.5 UNITS °C / W Ver 1.1 1 2013-3-13 P75N02LDG N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TC = 25 °C Unless Otherwise Noted) PARAMETER SYMBOL TEST CO […]

Absolute Maximum Ratings (Tc = 25°C)

1. Gate to source voltage : VGS = ± 20 V
2. Drain current: ID =  75 A
3. Drain power dissipation : PD = 54 W
4. Single pulse avalanche energy : Eas = 100 mJ
5. Channel temperature: Tch = -55 to +150 °C
6. Storage temperature: Tstg = -55 to +150 °C

 

P75N02LDG PDF Datasheet

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RJP30H2A Datasheet – 360V, 35A, IGBT (Transistor)

The IGBT is insulated-gate bipolar transistor.

This is one of the transistor types.

Part Number: RJP30H2A, RJP30H2DPK-M0

Manufacturer: Renesas, Panasonic

Package: TO-263, TO-3P Type

Function: N Channel  IGBT,  360V, 35A

See the preview image and the PDF file for more information.

Image:

RJP30H2A datasheet igbt

Description

RJP30H2A is Silicon N-Channel IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

1. Trench gate and thin wafer technology (G6H-II series)

2. Low collector to emitter saturation voltage: VCE(sat) = 1.4 V typ

3. High speed switching: tf = 100 ns typ, tf = 180 ns typ

4. Low leak current: ICES = 1 µA max

RJP30H2A pinout

RJP30H2A pinout transistor

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to Emitter voltage : VCES = 360 V

2. Gate to Emitter voltage : VGES = ±30 V

3. Collector current : Ic = 35 A

4. Collector peak current : ic(peak) = 250 A

5. Collector dissipation : PC = 60 W

6. Junction to case thermal impedance : θj-c = 2.08 °C/ W

7. Junction temperature : Tj = 150 °C

Applications

1. High speed power switching

RJP30H2A Datasheet

RJP30H2A pdf


Reference Datasheet : RJP30H2DPK-M0

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