G4PF50WD PDF Datasheet – N-Ch, 900V, 51A, IGBT

This post explains for the IGBT.

The Full Part Number is G4PF50WD, IRG4PF50WD.

The package is TO-247AC type.

The function of this semiconductor is 900V, 51A, Insulated-Gate Bipolar Transistor.

The manufacturers of this product is International Rectifier.

See the preview image and the PDF file for more information.

Preview images :

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G4PF50WD pinout igbt

Description

G4PF50WD is 900V, 51A, Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

1. Optimized for use in Welding and Switch-Mode Power Supply applications

2. Industry benchmark switching losses improve efficiency of all power supply topologies

3. 50% reduction of Eoff parameter

4. Low IGBT conduction losses

5. Latest technology IGBT design offers tighter parameter distribution coupled with exceptional reliability

6. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

Benefits :

1. Lower switching losses allow more cost-effective operation and hence efficient replacement of larger-die MOSFETs up to 100kHz

2. HEXFREDTM diodes optimized for performance with IGBTs. Minimized recovery characteristics reduce noise, EMI and switching losses

 

G4PF50WD pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 900 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 51 A

4. Collector dissipation : Pc = 200 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

G4PF50WD PDF Datasheet

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C9013 Datasheet PDF – 20V, 0.5A, NPN Transistor, 2SC9013

Part Number: KTC9013, 2SC9013, SS9013

Function: 20V, 0.5A, NPN Transistor

Package: TO-92 Type

Manufacturer: Usha (india), KEC

Image

C9013 npn transistor

Descripiton

C9013 transistor is 20V, 500mA, Silicon NPN Transistor.

This is 1W, Output Amplifier of Potable Radios in Class B Push-pull Operation.

Features

0. Vcbo = 40V, Vceo = 30V, Vebo = 5V, Ic = 500mA, Pc = 625mW

1. Excellent hFE

2. Linearity.

3. High total power dissipation ( PT = 625mW )

4. High Collector Current ( Ic = 500mA )

5. Complementary to KTC9012.

6. Complementary to SS9012.

Pinout

C9013 datasheet pinout

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 40 V

2. Collector to Emitter Voltage: Vceo = 20 V

3. Emitter to Base Voltage: Vebo = 5 V

4. Collector Current: Ic = 500 mA

5. Total Dissipation : Pc = 625 mW

6. Junction Temperature: Tj = 150°C

7. Storage Temperature: Tsg = -55 ~ +150°C

C9013 Datasheet PDF

Similar features and reference parts

SS9013

KTC9013