Transistor

G4PH40UD PDF Datasheet – 1200V, IGBT – IRG4PH40UD

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This post explains for the IGBT.

The Part Number is IRG4PH40UD, G4PH40UD.

The function of this semiconductor is 1200V, 41A, IGBT.

The package is TO-247AC Type

Manufacturer: International Rectifier

Preview images :

1 page
igbt G4PH40UD pdf

Description

G4PH40UD is 1200V, 41A, IGBT. IGBT stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

• UltraFast: Optimized for high operating frequencies up to 40 kHz in hard switching, >200 kHz in resonant mode

• New IGBT design provides tighter parameter distribution and higher efficiency than previous generations

• IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations

• Industry standard

 

2 page
G4PH40UD datasheet pinout

Benefits

• Higher switching frequency capability than competitive IGBTs

• Highest efficiency available

• HEXFRED diodes optimized for performance with IGBT’s . Minimized recovery characteristics require
less/no snubbing

G4PH40UD PDF Datasheet

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K15A60U PDF – 600V, 15A, MOSFET, TK15A60U, Transistor

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This is one of the types of MOSFET.

Part Number: TK15A60U

Marking : K15A60U

Function: 600V, 15A, N-Channel MOSFET (Transistor)

Package: TO-220 Type

Manufacturer: Toshiba

1 page
K15A60U equivalent datasheet

Description

K15A60U is 600V, 15A, Silicon N-Channel MOS Type (DTMOS II) Field Effect Transistor.

Features

1. Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.)

2. High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.)

3. Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)

4. Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

 

3 page
K15A60U mosfet pdf

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 15 A

4. Drain power dissipation : PD = 40 W

5. Single pulse avalanche energy : Eas = 81 mJ

6. Avalanche curren : Iar = 15 A

7. Repetitive avalanche energy : Ear = 4 mJ

8. Channel temperature: Tch = 150 °C

9. Storage temperature: Tstg = -55 to +150 °C

 

Applications

1. Switching Regulator

K15A60U PDF Datasheet

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