Transistor

G80N60UFD PDF Datasheet – 600V, 80A, IGBT – Fairchild

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This post explains for the IGBT.

The Part Number is G80N60UFD, SGH80N60UFD.

The function of this semiconductor is 600V, 80A, Ultrafast IGBT.

The package is TO-3P Type

Manufacturer: Fairchild Semiconductor

Preview images :

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transistor G80N60UFD pdf datasheet

Description

Fairchild’s UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for applications such as motor control and general inverters where high speed switching is a required feature.

G80N60UFD stands for Insulated-Gate Bipolar Transistor. It is a type of power semiconductor device that combines the advantages of bipolar transistors (high voltage and current handling capability) and field-effect transistors (fast switching and low on-state resistance).

They are also used in applications where high voltage and high current are required, such as in welding equipment and induction heating.

An IGBT consists of a P-N-P-N structure with an insulated gate, which is used to control the flow of current between the emitter and collector terminals. When a positive voltage is applied to the gate terminal, it creates a conducting channel between the emitter and collector, allowing current to flow.

Features

• High speed switching

• Low saturation voltage : VCE(sat) = 2.1 V @ IC = 40A

• High input impedance

• CO-PAK, IGBT with FRD : trr = 50ns (typ.)

 

G80N60UFD igbt pinout

 

Absolute Maximum Ratings (Ta = 25°C)

1. Collector to emitter voltage: Vces = 600 V

2. Gate to emitter voltage: Vges = ± 20 V

3. Collector current : Ic = 80 A

4. Collector dissipation : Pd = 195 W

5. Junction temperature : Tj = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

 

Applications:

1. AC & DC motor controls, general purpose inverters, robotics, and servo controls.

 

G80N60UFD PDF Datasheet

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KD617 PDF Datasheet – 80V, 10A, AF Power Transistor

Posted on by pinout

This post explains for the Transistor.

The Part Number is KD617.

The function of this semiconductor is AF Power Transistor.

The package is TO-3P Type.

Manufacturer: Tesla Elektronicke

Images:

KD617 datasheet transistor

 

Description

KD617 is 70W, 80V, 10A, AF Power Transistor. An AF (Audio Frequency) Power Transistor is a type of transistor specifically designed for amplifying audio signals in electronic circuits. Audio signals typically fall within the range of frequencies that humans can hear, which is roughly 20 Hz to 20,000 Hz. AF power transistors are optimized for applications where power amplification of audio signals is required. They are commonly used in audio amplifiers, including those found in stereo systems, radios, and other audio equipment.

KD617 transistor tesla

Absolute maximum ratings ( Ta=25°C )

1. Collector to Base Voltage: Vcbo = 80 V

2. Emitter to Base Voltage: Vebo = 5 V

3. Collector Current: Ic = 10 A

4. Collector Dissipation : Ptot = 70 W

 

KD617 PDF Datasheet

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