MDD14N25 Datasheet – 14N25 PDF – N-ch, 250V, MOSFET

Part Number: MDD14N25, 14N25

Function: 250V, N-Channel POWER MOSFET

Package: TO-252 Type

Manufacturer: MagnaChip

Image

MDD14N25

MDD14N25 == ME15N25

Description

This is 250V, 10.2A, 0.28 Ohm, N-Channel MOSFET(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

These N-channel MOSFET are produced using advanced MagnaChip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications.

 

Applications

1. DC/DC Converter

2. Load Switch

3. LCD/ LED Display inverter

MDD14N25 Datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain-Source Voltage : Vdss = 250 V

2. Gate-Source Voltage : Vgss = ± 30 V

3. Peak Diode Recovery dv/dt : dv/dt = 4.5 V/ns

4. Repetitive Avalanche Energy : EAR = 6.94 mJ

5. Avalanche current : IAR = 10.2 A

6. Single Pulse Avalanche Energy : EAS = 550 mJ

7. Junction and Storage Temperature Range : TJ, Tstg = -55 ~ 150 °C

MDD14N25 Datasheet


MDD14N25 pdf

Datasheet Download :  [ ME15N25.PDF ]

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K4111 PDF Datasheet – 600V, 10A, N-ch, MOSFET – Toshiba

This post explains for MOSFET.

The Part Number is K4111, 2SK4111.

The function of this semiconductor is N-channel 600V, 10A, MOSFET.

The package is TO-220 Type.

Manufacturer: Toshiba

Preview images :

1 page
K4111 mosfet pinout

Description

K4111 is Silicon N Channel MOS Type Field Effect Transistor(Metal Oxide Semiconductor Field Effect Transistor). This is a type of field effect transistor (FET) that uses an N-type semiconductor material as the conducting channel to control the flow of current.

Features

• Low drain-source ON resistance: RDS (ON) = 0.54 Ω (typ.)

• High forward transfer admittance: |Yfs| = 8.5S (typ.)

• Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)

• Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

 

2 page
K4111 pdf datasheet

Absolute Maximum Ratings (Ta = 25°C)

1. Drain to source voltage: VDSS = 600 V

2. Gate to source voltage: VGSS = ± 30 V

3. Drain current: ID = 10 A

4. Drain Power Dissipation: Pd = 45 W

5. Channel temperature: Tch = 150 °C

6. Storage temperature: Tstg = -55 to +150 °C

Applications:

1. Switching Regulator

K4111 PDF Datasheet

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